DS60 Maxim Integrated Products, DS60 Datasheet - Page 2

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DS60

Manufacturer Part Number
DS60
Description
Manufacturer
Maxim Integrated Products
Datasheet

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output that is capable of sourcing 125µA, which allows the DS60 to be switched to a zero power standby
state when the gate is forced to a logic 0.
ABSOLUTE MAXIMUM RATINGS*
Voltage on V
Output Current
Operating Temperature Range
Storage Temperature Range
ESD Susceptibility (Human Body Model)
Soldering Temperature
* These are stress ratings only and functional operation of the device at these or any other conditions
The Dallas Semiconductor DS60 is built to the highest quality standards and manufactured for long-term
reliability. All Dallas Semiconductor devices are made using the same quality materials and
manufacturing methods. However, the DS60 is not exposed to environmental stresses, such as burn-in,
that some industrial applications require.
DC ELECTRICAL CHARACTERISTICS
NOTES:
1) All voltages are referenced to ground unless otherwise specified.
2) Specified for V
3) Nonlinearity is the maximum deviation from an ideal linear slope.
4) Typical drift following three consecutive passes through a vapor phase process.
Supply Voltage
Supply Current
Measurement
Error
V
Sensor Gain
Nonlinearity
Power Supply
Regulation
Sensor Drift
Output Impedance
PARAMETER
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
O
DC Offset
220°C for 15s (IR)
DD
O
sourcing 1.0µA (max).
SYMBOL
ΔV/ΔT
T
V
I
ERR
DD
DD
0°C ≤ T
-40°C ≤ T
2.7V ≤ V
3.0V ≤ V
CONDITION
T = 0°C
A
DD
DD
≤ 85°C
A
≤ 125°C
≤ 3.3V
≤ 5.5V
2 of 2
(-40°C to +125°C; 2.7V ≤ V
-40°C to +125°C
-55°C to +150°C
2kV
215°C for 60s (Vapor Phase)
GND -0.3V to +6.5V
5.0mA
MIN
2.7
6.0
±0.25
TYP
6.25
424
80
MAX
±0.25
±0.8
±2.0
125
800
5.5
6.5
±2
±3
UNITS
mV/°C
mV/V
mV/V
mV
µA
°C
°C
°C
V
Ω
DD
≤ 5.5V)
NOTES
1, 2
2, 3
1
2
2
2
4
DS60

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