SKM100GB12V Semikron International, SKM100GB12V Datasheet
SKM100GB12V
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SKM100GB12V Summary of contents
Page 1
... SKM100GB12V ® SEMITRANS 2 SKM100GB12V Target Data Features • V with positive temperature CE(sat) coefficient • High short circuit capability, self limiting Icnom • Fast & soft inverse CAL diodes • Large clearance (10 mm) and creepage distances (20 mm) • Isolated copper baseplate using DBC Technology (Direct Copper Bonding) • ...
Page 2
... SKM100GB12V ® SEMITRANS 2 SKM100GB12V Target Data Features • V with positive temperature CE(sat) coefficient • High short circuit capability, self limiting Icnom • Fast & soft inverse CAL diodes • Large clearance (10 mm) and creepage distances (20 mm) • Isolated copper baseplate using DBC Technology (Direct Copper Bonding) • ...
Page 3
... SKM100GB12V SEMITRANS 2 GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © ...