MBRP20045CTL ON Semiconductor, MBRP20045CTL Datasheet

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MBRP20045CTL

Manufacturer Part Number
MBRP20045CTL
Description
Manufacturer
ON Semiconductor
Datasheet
1.MBRP20045CTL.pdf (4 pages)
MBRP20045CT
POWERTAP
SWITCHMODE
Power Rectifier
metal. These state-of-the-art devices have the following features:
Mechanical Characteristics:
MAXIMUM RATINGS
December, 2002 - Rev. 4
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
Peak Repetitive Forward Current,
Non-Repetitive Peak Surge Current
Peak Repetitive Reverse Current
Storage Temperature Range
Operating Junction Temperature
Voltage Rate of Change (Rated V
. . . using the Schottky Barrier principle with a platinum barrier
May Be Paralleled for Higher Current Output
See procedure given in the Package Outline Section
Dual Diode Construction —
Guardring for Stress Protection
Low Forward Voltage
150 C Operating Junction Temperature
Guaranteed Reverse Avalanche
Case: Epoxy, Molded with metal heatsink base
Weight: 80 grams (approximately)
Finish: All External Surfaces Corrosion Resistant
Top Terminal Torque: 25-40 lb-in max
Base Plate Torques:
Shipped 25 units per foam
Marking: B20045T
Semiconductor Components Industries, LLC, 2002
(Rated V
20 kHz, T
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
(2.0 ms, 1.0 kHz)
R
, T
R
C
, Square Wave,
C
= 140 C)
Rating
= 140 C)
Per Device
Preferred Device
Per Leg
Per Leg
Per Leg
R
)
II
Symbol
V
V
I
I
dv/dt
I
I
F(AV)
RRM
T
FRM
FSM
RWM
V
RRM
T
stg
R
J
-55 to +150
-55 to +150
10,000
Value
1500
100
200
200
2.0
45
1
V/ms
Unit
V
A
A
A
A
C
C
MBRP20045CT
Preferred devices are recommended choices for future use
and best overall value.
Device
BARRIER RECTIFIER
ORDERING INFORMATION
YYWW
MARKING DIAGRAM
B20045T = Device Code
YY
WW
200 AMPERES
1
3
http://onsemi.com
SCHOTTKY
1
2
45 VOLTS
POWERTAP II
POWERTAP II
CASE 357C
PLASTIC
Package
2
= Year
= Work Week
Publication Order Number:
B20045T
MBRP20045CT/D
3
25 Units/Tray
Shipping

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MBRP20045CTL Summary of contents

Page 1

MBRP20045CT Preferred Device POWERTAP II SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: Dual Diode Construction — May Be Paralleled for Higher Current Output Guardring ...

Page 2

THERMAL CHARACTERISTICS (Per Leg) Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 200 Amps 200 Amps 125 Instantaneous Reverse Current (Note ...

Page 3

The POWERTAP package requires special mounting considerations because of the long longitudinal axis of the copper heat sink important to follow the proper tightening sequence to avoid warping the heat sink, which can reduce thermal contact between the ...

Page 4

... SEATING -T- PLANE E JAPAN: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14 ...

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