MJ10015 ON Semiconductor, MJ10015 Datasheet - Page 5

• Manufacturer Part Number: MJ10015
• Manufacturer: ON Semiconductor

The Safe Operating Area figures shown in Figures 7 and 8 are
specified ratings for these devices under the test conditions
shown.
Figure 7. Forward Bias Safe Operating Area
Figure 8. Reverse Bias Switching Safe
u
Figure 9. Power Derating
Operating Area
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FORWARD BIAS
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when T
not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 7 may be found at
any case temperature by using the appropriate curve on
Figure 9.
REVERSE BIAS
sustained simultaneously during turn–off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current condition allowable
during reverse biased turn–off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 8 gives the complete RBSOA
characteristics.
There are two Iimitations on the power handling ability of
The data of Figure 7 is based on T
For inductive loads, high voltage and high current must be
SAFE OPERATING AREA INFORMATION
Figure 10. Typical Reverse Base Current
versus V
C
25_C. Second breakdown limitations do
BE(off)
Resistance
With No External Base
C
= 25_C; T
C
J(pk)
– V
CE
is