PRHMB200B12 Nihon Inter Electronics (NIEC), PRHMB200B12 Datasheet
PRHMB200B12
Manufacturer Part Number
PRHMB200B12
Description
Manufacturer
Nihon Inter Electronics (NIEC)
Datasheet
1.PRHMB200B12.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PRHMB200B12
Quantity:
60
Part Number:
PRHMB200B12A
Quantity:
60
IGBT
CIRCUIT
MAXMUM RATINGS
Collector-Emitter Voltage
Gate - Emitter Voltage
Collector Current
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
Isolation Voltage Terminal to Base AC, 1 min.)
Mounting Torque
Collector-Emitter Cut-Off Current
Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Input Capacitance
Switching Time
Forward Current
Peak Forward Voltage
Reverse Recovery Time
Thermal Impedance
ELECTRICAL CHARACTERISTICS
FREE WHEELING DIODES RATINGS & CHARACTERISTICS
THERMAL CHARACTERISTICS
Characteristic
MODULE
MODULE
MODULE
MODULE
Rise Time
Turn-on Time
Fall Time
Turn-off Time
Characteristic
Characteristic
Module Base to Heatsink
Bus Bar to Main Terminals
Item
Item
(Tc=25 C)
Chpper 200A 1200V
Chpper 200A 1200V
Chpper 200A 1200V
Chpper 200A 1200V
Symbol
DIODE
IGBT
1 ms
1 ms
DC
DC
V
t
rr
F
(Tc=25 C)
Symbol
Symbol
Symbol
Symbol
V
V
I
Cies
V
I
I
V
F
F
R
V
CE(sat)
GE(th)
T
CES
GES
t
t
I
I
=200A,V
P
t
t
I
T
on
I
CES
GES
TOR
off
FM
th(j-c)
CP
ISO
r
stg
f
C
F
C
j
I
Test Condition
F
=200A,V
GE
V
V
I
V
V
V
R
R
V
C
CE
GE
CE
CE
CC
L
G
GE
=200A,V
=-10V,di/dt=400A/
= 3 ohm
= 2 ohm
=1200V,V
=+/- 20V,V
=5V,I
=10V,V
= 600V
= +/- 15V
Test Condition
Junction to Case
Test Condition
GE
C
=200mA
=0V
OUTLINE DRAWING
GE
GE
(Tc=25 C)
=15V
=0V,f=1MHz
GE
CE
=0V
=0V
s
PRHMB200B12
Rated Value
-40 to +150
-40 to +125
+/ - 20
1200
2500
200
400
960
200
400
3
Min.
Min.
2
-
-
-
-
Min.
4.0
-
-
-
-
-
-
-
-
PRHMB200B12
PRHMB200B12
PRHMB200B12
PRHMB200B12
Typ.
Typ.
1.9
0.2
16600
Typ.
-
-
0.25
0.40
0.25
0.80
1.9
-
-
-
Approximate Weight : 320g
2- fasten- tab No 110
Dimension(mm)
Max.
Max.
0.125
Max.
0.24
2.4
0.3
0.45
0.70
0.35
1.10
4.0
1.0
2.4
8.0
-
N m
Unit
Unit
Unit
Unit
Unit
C/W
mA
pF
W
V
V
A
V
V
A
V
V
C
C
A
s
s
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PRHMB200B12 Summary of contents
Page 1
... =200A,V =-10V,di/dt=400A Symbol Test Condition IGBT R Junction to Case th(j-c) DIODE PRHMB200B12 PRHMB200B12 PRHMB200B12 PRHMB200B12 2- fasten- tab No 110 Dimension(mm) Approximate Weight : 320g PRHMB200B12 1200 +/ - 20 200 400 960 -40 to +150 -40 to +125 2500 3 2 Min. Typ. Max =15V - 1 ...
Page 2
... PRHMB200B12 Fig.1- Output Characteristics 400 V =20V 12V GE 15V 300 200 100 Collector to Emitter Voltage V Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage 16 I =100A 400A C 14 200A Gate to Emitter Voltage V Fig.5- Capacitance vs. Collector to Emitter Voltage ...
Page 3
... PRHMB200B12 Fig.7- Series Gate Impedance vs. Switching Time 10 V =600V CC I =200A =±15V GE T =25℃ toff C 2 ton 1 0.5 0.2 0.1 0. Series Gate Impedance R G Fig.9- Reverse Recovery Characteristics 1000 I =200A F T =25℃ C 500 200 trr 100 RrM 200 ...