QM100DY-24BK MITSUBISHI, QM100DY-24BK Datasheet - Page 4

• Manufacturer Part Number: QM100DY-24BK
• Manufacturer: MITSUBISHI

0.25
0.20
0.15
0.10
0.05
10
10
10
10
10
10
FORWARD BIAS SAFE OPERATING AREA
3
2
7
5
4
3
2
7
5
4
3
7
5
3
2
7
5
3
2
7
5
3
2 T
10
0
10
1
0
COLLECTOR-EMITTER VOLTAGE V
3
2
1
0
10
3 4 5 7
TRANSIENT THERMAL IMPEDANCE
0
–3
BASE REVERSE CURRENT –I
V
I
I
NON–REPETITIVE
CHARACTERISTIC (TRANSISTOR)
0
B1
C
C
CC
=100A
2
2
2
=25°C
=200mA
SWITCHING TIME VS. BASE
=600V
3
3
3
T
T
j
j
=25°C
=125°C
t
t
CURRENT (TYPICAL)
5
5
5
s
f
10
7
7
7
10
10
0
10
DC
1
–2
1
TIME (s)
2 3 4 5 7
2
2
2
3
3
3
5
5
5
1ms
7
100µs
7
7
200µs
10
10
10
–1
2
2
10
2
2
1
3
3
50µs
B2
(A)
5
5
CE
2 3
7
7
(V)
10
10
0
3
240
200
160
120
100
10
10
10
80
40
90
80
70
60
50
40
30
20
10
COLLECTOR-EMITTER REVERSE VOLTAGE
0
0
7
5
4
3
2
7
5
4
3
2
REVERSE BIAS SAFE OPERATING AREA
2
1
0
COLLECTOR-EMITTER VOLTAGE V
0
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
T
MITSUBISHI TRANSISTOR MODULES
j
–I
COLLECTOR-EMITTER REVERSE
=125°C
CHARACTERISTICS) (TYPICAL)
20
200
CASE TEMPERATURE T
B2
VOLTAGE (DIODE FORWARD
COLLECTOR
DISSIPATION
=2A
0.4
40
400
HIGH POWER SWITCHING USE
60
0.8
–V
600
CEO
80
QM100DY-24BK
800
(V)
1.2
100 120
SECOND
BREAKDOWN
AREA
1000
T
T
C
j
j
1.6
=25°C
=125°C
INSULATED TYPE
1200 1400
( C)
140
CE
160
2.0
(V)
Feb.1999