SKM150GB125D Semikron International, SKM150GB125D Datasheet
SKM150GB125D
Manufacturer Part Number
SKM150GB125D
Description
Manufacturer
Semikron International
Datasheet
1.SKM150GB125D.pdf
(6 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SKM150GB125D
Manufacturer:
SEMIKRON
Quantity:
1 000
5)
© by SEMIKRON
Absolute Maximum Ratings
Symbol Conditions
V
V
I
I
V
P
T
V
humidity
climate
Inverse Diode
I
I
I
I
Characteristics
Symbol Conditions
V
V
I
I
V
V
g
C
C
C
C
L
t
t
t
t
E
E
Inverse Diode
V
V
V
r
I
Q
Thermal characteristics
R
R
R
C
CM
F
FM
FSM
2
CES
GES
d(on)
r
d(off)
f
RRM
t
fs
CE
j
CES
CGR
GES
tot
isol
t
(BR)CES
GE(th)
CEsat
CEsat
on
off
F
F
TO
, (T
CHC
ies
oes
res
thjc
thjc
thch
rr
= –I
Not suitable for hard switching using PWM: Use range “SKM ... 123D “or “...124D“
= V
= V
= –I
stg
C
EC
EC
)
CM
R
T
T
per IGBT, T
AC, 1 min.
DIN 40040
DIN IEC 68 T.1
T
T
t
t
V
V
V
V
V
I
I
V
per IGBT
I
I
T
T
I
I
per IGBT
per diode
per module
p
p
C
C
F
F
F
F
case
case
case
case
j
j
GE
GE
GE
CE
GE
CE
GE
= 10 ms; sin.; T
= 10 ms; T
= 100 A
= 150 A
= 100 A; T
= 100 A; T
= 100 A
= 150 A
V
V
f = 1 MHz
V
V
I
R
T
= 125 °C
= 125 °C
C
j
GE
CE
CC
GE
8)
Gon
= V
= 20 V, I
= 20 k
= 0, I
= V
= 0
= 20 V, V
= 125 °C
= 100 A, ind. load
= 25/80 °C
= 25/80 °C; t
= 25/80 °C
= 25/80 °C; t
= 600 V
= 25 V
= 0
= –15 V / +15 V
= R
CE
CES
C
, I
= 2 mA
Goff
case
2)
2)
C
C
j
j
j
T
T
V
T
V
T
= 2 mA
1)
1)
CE
= 25 (125) °C
= 25 (125) °C
= 150 °C
j
j
j
j
GE
= 100 A
GE
= 10
= 25 °C
= 125 °C
= 25 (125) °C
= 25 (125) °C
= 25 °C
= 0
= 15 V;
= 0 V;
j
p
p
= 150 °C
= 1 ms
= 1 ms
3)
2)
2)
min.
4,5
V
51
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
CES
–40 ... +150 (125)
2,25(2,1)
150 / 100
300 / 200
5,4(4,2)
6,7(5,3)
2,0(1,8)
35(50)
40/125/56
300 / 200
5(14)
1000
typ.
11,7
Values
115 / 80
Class F
720
110
360
5,5
0,2
50
40
13
1200
1200
1040
2500
1000
5000
–
9
–
–
–
–
3
–
8
–
–
–
± 20
0898
4)
4)
8(6,5)
max.
0,038
1600
1080
15,6
0,12
0,25
700
6,5
2,5
1,2
20
11
–
2
–
1
–
–
–
–
–
–
–
–
–
–
–
Units
Units
°C/W
°C/W
°C/W
mWs
mWs
m
mA
mA
nH
A
pF
nF
pF
pF
ns
ns
ns
ns
°C
W
V
V
V
V
S
V
V
V
A
V
V
A
A
V
V
A
A
A
A
C
2
s
SEMITRANS
Ultra Fast IGBT Modules
SKM 150 GB 125 D
Preliminary Data
SEMITRANS 3
Features
•
•
•
•
•
•
•
•
•
Typical Applications
•
•
•
•
•
1)
2)
3)
4)
8)
Cases and mech. data
N channel, homogeneous Silicon
structure (NPT- Non punch-
through IGBT)
Ultra fast with heavy metal
doping
Low inductance case
Almost no tail current
High short circuit capability,
self limiting to 6 * I
Latch-up free
Fast & soft inverse CAL diodes
Isolated copper baseplate using
DCB Direct Copper Bonding
Technology
Large clearance (12 mm) and
creepage distances (20 mm)
Fast switching (not for linear use)
High frequency welding
Induction heating
Resonant inverters (CSI, ZV, ZC)
Uninterruptable power supplies
> 20 kHz
T
specified
I
–di
Use V
For paralleling use derating of 20 %
because of neg. temp. coefficient of
V
change
CAL = Controlled Axial Lifetime
Technology.
F
GB
B 6 – 286
case
CEsat
= – I
F
/dt = 1000 A/ s, V
= 25 °C, unless otherwise
, contact factory, Subject to
GEoff
C
, V
4)
R
= –5... –15 V
= 600 V,
®
5)
M
cnom
GE
= 0 V
B 6 – 281
8)
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SKM150GB125D Summary of contents
Page 1
Absolute Maximum Ratings 1) Symbol Conditions V CES CGR 25/80 °C C case 25/80 ° case p V GES P per IGBT, T ...
Page 2
SKM 150 GB 125 D 1000 W 800 600 400 200 P tot 100 120 140 160 T C Fig. 1 Rated power dissipation ...
Page 3
A 270 17V 240 15V 13V 210 11V 9V 180 7V 150 120 Fig. 9 Typ. output characteristic · I cond(t) CEsat(t) C(t) ...
Page 4
SKM 150 GB 125 600V 200 400 Q Gate Fig. 13 Typ. gate charge characteristic 1000 ns 100 100 150 ...
Page 5
M151GB12.XLS K/W 0,1 0,01 0,001 single pulse Z thJC 0,0001 1E-05 0,0001 0,001 0,01 0 Fig. 19 Transient thermal impedance of IGBT thJC p ...
Page 6
SKM 150 GB 125 D SEMITRANS 3 Case Recognized File no 532 SKM 150 GB 125 D Dimensions in mm Case outline and circuit diagram Mechanical Data Symbol Conditions M to heatsink, SI Units 1 ...