2SD1012 Sanyo Semiconductor Corporation, 2SD1012 Datasheet - Page 4

• Manufacturer Part Number: 2SD1012
• Manufacturer: Sanyo Semiconductor Corporation

Sample Application Circuit : Low-voltage 3V (P
Main Specifications
Note : for above-mentioned h
· Circuit configuration
C
O
V
T
n I
t o
r u
t o
u
p
For obtaining an output of more than 100mW, the middle-point voltage at the output stage and the collector voltage
p t
l a
t u
a l
of the driver transistor must be V
posed of npn/npn transistors. The phase is reversed by the 2SA608 and the middle-point voltage are the output
stage and the collector voltage of the driver transistor are more to be V
e r
100
t u
g
10
t n
h
e r
e
r a
3
2
7
5
3
2
7
5
3
p
s
i d
5
g
o
s i
m
a
s s
w
a t
INPUT
n i
o
r e
n
p i
n
c i
7
c
t a
e
d
o i
s i
C
n
o t
1.0
h
100 F
6.3V
10
6.3V
a
t r
a r
270k
o i
+
t c
n
Input Voltage, V IN – mV
r e
s i
2SC536E, F
+
c i t
FE
2
P O -- V IN
rank.
3.9k
22
+
TR1
10 F
6.3V
3
2SC536E
5
330p
CC
27k
/2. Therefore, the output stage is of quasi complementary configuration com-
Q
T
P O
P O
P O
100
7
H
100
u
e i
D
=
=
=
=
1
5
1
TR2
c s
0
0
0
10
1
e
m
m
m
0
V CC =3V
R L =8
f=1kHz
D1
2SA608E, F
n
150
%
W
W
W
2SB808/2SD1012
, t
ITR08391
o t
a t
DS442 2
15k
c l
R1
2
r u
O
*
C
R1 : Used control idele current
For R1=820 . use rank F for [TR4, 5(2SD1012)]
For R1=680 . use rank G for [TR4, 5(2SD1012)]
e r
120mW) ITL-OTL power amplifier.
o
t n
n
d
1k
TR3
t i
i d
o i
s s
2SD1012F, G 2
n
D2
p i
s
t a
o i
n
100
1.0
10
7
5
3
2
7
5
3
2
3
220 F
6.3V
TR5
TR4
+
CC
5
/2 so that the output can be maximized.
1
1
4
1
1
7
1
2
3
4 .
0
0 .
0
3 .
4 .
o t
o t
10
o t
o t
o t
= f
Output Power, P O – mW
2
1
1
4
6 .
2
4
2
5
5
0
0
5
5 .
5 .
5 .
0
SP
8
V CC =3V
THD -- P O
H
z
2
3
1
1
4
1
1
1
2
3
3 .
1
0 .
7
5 .
0 .
5
o t
o t
o t
o t
o t
2
= f
1
7
1
4
5 .
2
3
1
5
5
1
0
k
5 .
7 .
0 .
100
H
z
ITR09909
V CC =3V
R L =8
f=1kHz
No.676–4/5
ITR08392
2
U
m
m
d
k
%
n
W
B
3
A
t i