MBRP20060CTL ON Semiconductor, MBRP20060CTL Datasheet

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MBRP20060CTL

Manufacturer Part Number
MBRP20060CTL
Description
Manufacturer
ON Semiconductor
Datasheet
MBRP20060CT
POWERTAP
SWITCHMODE
Power Rectifier
metal. These state-of-the-art devices have the following features:
Mechanical Characteristics:
MAXIMUM RATINGS
December, 2002 - Rev. 2
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
Peak Repetitive Forward Current,
Non-Repetitive Peak Surge Current
Peak Repetitive Reverse Current
Storage Temperature Range
Operating Junction Temperature
Voltage Rate of Change (Rated V
. . . using the Schottky Barrier principle with a platinum barrier
May Be Paralleled for Higher Current Output
See procedure given in the Package Outline Section
Dual Diode Construction —
Guardring for Stress Protection
Low Forward Voltage
150 C Operating Junction Temperature
Case: Epoxy, Molded with metal heatsink base
Weight: 80 grams (approximately)
Finish: All External Surfaces Corrosion Resistant
Top Terminal Torque: 25-40 lb-in max
Base Plate Torques:
Shipped 25 units per foam
Marking: B20060T
Semiconductor Components Industries, LLC, 2002
(Rated V
20 kHz, T
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
(2.0 ms, 1.0 kHz)
R
, T
R
C
, Square Wave,
C
= 140 C)
Rating
= 140 C)
Per Device
Preferred Device
Per Leg
Per Leg
Per Leg
R
)
II
Symbol
V
V
I
I
dv/dt
I
I
F(AV)
RRM
T
FRM
FSM
RWM
V
RRM
T
stg
R
J
-55 to +150
-55 to +150
10,000
Value
1500
100
200
200
2.0
60
1
V/ms
Unit
V
A
A
A
A
C
C
MBRP20060CT
Preferred devices are recommended choices for future use
and best overall value.
Device
BARRIER RECTIFIER
ORDERING INFORMATION
YYWW
MARKING DIAGRAM
B20060T = Device Code
YY
WW
200 AMPERES
1
3
http://onsemi.com
SCHOTTKY
1
2
60 VOLTS
POWERTAP II
POWERTAP II
CASE 357C
PLASTIC
Package
2
= Year
= Work Week
Publication Order Number:
B20060T
MBRP20060CT/D
3
25 Units/Tray
Shipping

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MBRP20060CTL Summary of contents

Page 1

MBRP20060CT Preferred Device POWERTAP II SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: Dual Diode Construction — May Be Paralleled for Higher Current Output Guardring ...

Page 2

THERMAL CHARACTERISTICS (Per Leg) Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 200 Amps 200 Amps 100 Instantaneous Reverse Current (Note ...

Page 3

T = 150 C J 0.1 0.01 100 C 0.001 0.0001 0.00001 25 C 0.000001 REVERSE VOLTAGE (VOLTS) R Figure 3. Typical Reverse Current 160 dc 140 SQUARE 120 WAVE 100 Ipk/Io = ...

Page 4

MBRP20060CT REVERSE VOLTAGE (VOLTS) R Figure 7. Capacitance tjc(t) tjc*r(t) 0.01 0.1 T, TIME ...

Page 5

MAXIMUM MECHANICAL RATINGS Terminal Penetration: 0.235 max Terminal Torque: 25-40 in-lb max Mounting Torque — Outside Holes: 30-40 in-lb max Mounting Torque — Center Hole: 8-10 in-lb max Seating Plane 1 mil per in. Flatness (between mounting holes) Note: While ...

Page 6

MBRP20060CT PACKAGE DIMENSIONS CASE 357C-03 POWERTAP PLASTIC PACKAGE ISSUE E W 0.25 (0.010 0.25 (0.010 ...

Page 7

Notes MBRP20060CT http://onsemi.com 7 ...

Page 8

... Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada MBRP20060CT JAPAN: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative ...

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