MT4LC16M4H9DJ-6S Micron Semiconductor Products, MT4LC16M4H9DJ-6S Datasheet
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MT4LC16M4H9DJ-6S
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MT4LC16M4H9DJ-6S Summary of contents
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... ** version, A12 on G3 version DJ 16 MEG x 4 EDO DRAM PART NUMBERS TG -5 PART NUMBER -6 MT4LC16M4H9DJ-x MT4LC16M4H9DJ-x S MT4LC16M4H9TG-x None MT4LC16M4H9TG MT4LC16M4G3DJ-x MT4LC16M4G3DJ-x S MT4LC16M4G3TG-x MT4LC16M4G3TG speed GENERAL DESCRIPTION The 16 Meg x 4 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from ...
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WE# CAS# NO. 2 CLOCK GENERATOR COLUMN- ADDRESS A0 11 BUFFER(11 REFRESH CONTROLLER REFRESH A7 COUNTER A10 ROW- A11 ADDRESS 13 A12 BUFFERS (13) NO. 1 CLOCK RAS# GENERATOR WE# CAS# ...
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GENERAL DESCRIPTION (Continued) uniquely addressed via the address bits. First, the row address is latched by the RAS# signal, then the column address is latched by CAS#. The device provides EDO- PAGE-MODE operation, allowing for fast successive data operations (READ, ...
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DRAM REFRESH (Continued) The self refresh mode is terminated by driving RAS# t HIGH for a minimum time of RPS. This delay allows for the completion of any internal refresh cycles that may be in process at the time of ...
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ABSOLUTE MAXIMUM RATINGS* Voltage on V Relative to V ................ -1V to +4. Voltage on NC, Inputs or I/O Pins Relative to V ....................................... -1V to +4.6V SS Operating Temperature, T (ambient) ... 0°C to +70°C A Storage ...
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ICC OPERATING CONDITIONS AND MAXIMUM LIMITS (Notes +3.3V ±0.3V) CC PARAMETER/CONDITION STANDBY CURRENT: TTL (RAS# = CAS STANDBY CURRENT: CMOS (RAS# = CAS 0.2V; DQs may be ...
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CAPACITANCE (Note: 2) PARAMETER Input Capacitance: Address pins Input Capacitance: RAS#, CAS#, WE#, OE# Input/Output Capacitance ELECTRICAL CHARACTERISTICS (Notes 10, 11, 12 CHARACTERISTICS PARAMETER Access time from column address Column-address setup ...
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AC ELECTRICAL CHARACTERISTICS (Notes 10, 11, 12 CHARACTERISTICS PARAMETER OE# setup prior to RAS# during HIDDEN REFRESH cycle EDO-PAGE-MODE READ or WRITE cycle time EDO-PAGE-MODE READ-WRITE cycle time Access time from RAS# RAS# ...
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NOTES 1. All voltages referenced This parameter is sampled. V MHz 25° dependent on output loading and cycle CC rates. Specified values are obtained with mini- mum cycle time and ...
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V IH RAS CRP V CAS ASR V IH ROW ADDR WE OE TIMING PARAMETERS -5 SYMBOL MIN ...
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V IH RAS CRP CAS ASR V IH ADDR ROW IOH DQ V IOL TIMING PARAMETERS -5 SYMBOL MIN ...
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WRITE and READ-MODIFY-WRITE cycles RAS CRP V IH CAS ASR V IH ADDR V ROW WE IOH DQ V IOL ...
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V IH RAS CSH t CRP V CAS RAD t ASR t RAH V IH ADDR V ROW OPEN OE# ...
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EDO-PAGE-MODE EARLY WRITE CYCLE V IH RAS CSH t CRP V IH CAS RAD t ASR t RAH V IH ADDR ROW WCS ...
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WRITE and READ-MODIFY-WRITE cycles RAS CRP V IH CAS ASR V IH ADDR V ROW WE IOH DQ V IOL ...
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EDO-PAGE-MODE READ EARLY WRITE CYCLE V IH RAS CRP t RCD V IH CAS RAD t ASR t RAH V IH ADDR ROW WE IOH DQ OPEN ...
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V IH RAS CRP V CAS ASR V IH ADDR WE OE TIMING PARAMETERS -5 SYMBOL MIN MAX ...
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V IH RAS CRP V IH CAS ASR V IH ADDR RAS RPC CSR V IH CAS# ...
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V IH RAS CRP CAS ASR t RAH V IH ADDR ROW OE TIMING PARAMETERS -5 SYMBOL MIN MAX t AA ...
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RAS RPC CSR V IH CAS WRP TIMING PARAMETERS -5 SYMBOL MIN MAX t CHD 15 t ...
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PIN #1 ID .050 (1.27) TYP .024 (0.61) .032 (0.82) .026 (0.67) SEATING PLANE NOTE: 1. All dimensions in inches (millimeters) MAX or typical where noted. 2. Package width and length do ...
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TYP 32 1 .020 (0.50) .012 (0.30) NOTE: 1. All dimensions in inches (millimeters) MAX or typical where noted. 2. Package width and length do not include mold protrusion; allowable mold protrusion is .01" ...