MT28F002B3VG-9T Micron Semiconductor Products, MT28F002B3VG-9T Datasheet
MT28F002B3VG-9T
Related parts for MT28F002B3VG-9T
MT28F002B3VG-9T Summary of contents
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FLASH MEMORY FEATURES • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks • Smart 3 technology (B3): 3.3V 0. 3.3V 0.3V V application programming PP 5V 10% V application/production PP programming ...
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... ORDER NUMBER AND PART MARKING MT28F002B3VG-9 B MT28F002B3VG-9 T MT28F002B3VG-10 BET MT28F002B3VG-10 TET Micron Technology, Inc., reserves the right to change products or specifications without notice. 2 44-Pin SOP RP ...
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BYTE# I/O Control Logic Addr. A0-A16/(A17) Buffer/ Latch A9 Power (Current) Control WP# CE# Command OE# Execution WE# Logic RP NOTE: 1. Does not apply to MT28F002B3. 2Mb Smart 3 Boot Block Flash Memory F48.p65 ...
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PIN DESCRIPTIONS 44-PIN SOP 40-PIN TSOP 48-PIN TSOP NUMBERS NUMBERS NUMBERS – 47 11, 10 21, 20, 19, 25, 24, 23, 7, ...
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TRUTH TABLE (MT28F200B3) FUNCTION Standby RESET READ READ (word mode) READ (byte mode) Output Disable WRITE/ERASE (EXCEPT BOOT BLOCK) ERASE SETUP 3 ERASE CONFIRM WRITE SETUP 4 WRITE (word mode) 4 WRITE (byte mode) 5 READ ARRAY 2, 7 WRITE/ERASE ...
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TRUTH TABLE (MT28F002B3) FUNCTION Standby RESET READ READ Output Disable WRITE/ERASE (EXCEPT BOOT BLOCK) ERASE SETUP 3 ERASE CONFIRM WRITE SETUP 4 WRITE 5 READ ARRAY WRITE/ERASE (BOOT BLOCK) ERASE SETUP 3 ERASE CONFIRM 3, 6 ERASE CONFIRM WRITE SETUP ...
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FUNCTIONAL DESCRIPTION The MT28F002B3 and MT28F200B3 flash memory incorporate a number of features ideally suited for system firmware. The memory array is segmented into individual erase blocks. Each block may be erased without affecting data stored in other blocks. These ...
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COMMAND EXECUTION LOGIC (CEL) The CEL receives and interprets commands to the device. These commands control the operation of the ISM and the read path (i.e., memory array, ID register or status register). Commands may be issued to the CEL ...
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V or the WP# pin held HIGH until the ERASE HH or WRITE is completed. The V PP (3.3V or 5V) when the boot block is written to or erased. The MT28F002B3 and MT28F200B3 are available in two ...
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INPUT OPERATIONS The DQ pins are used either to input data to the array or to input a command to the CEL. A command input issues an 8-bit command to the CEL to control the mode of operation of the ...
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COMMAND SET To simplify writing of the memory blocks, the MT28F002B3 and MT28F200B3 incorporate an ISM that controls all internal algorithms for the WRITE and ERASE cycles. An 8-bit command set is used to control the device. Details on how ...
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COMMAND EXECUTION Commands are issued to bring the device into differ- ent operational modes. Each mode allows specific op- erations to be performed. Several modes require a sequence of commands to be written before they are reached. The following section ...
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WRITE. To execute a null WRITE, FFH must be written when BYTE# is LOW, or FFFFH must be written when BYTE# is HIGH. Once the ISM status bit (SR7) has been set, the device will be in the ...
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WRITE/ERASE CYCLE ENDURANCE The MT28F002B3 and MT28F200B3 are designed and fabricated to meet advanced firmware storage re- quirements. To ensure this level of reliability 3.3V 0. 10% during write or erase cycles. For SmartVoltage-compatible production ...
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SELF-TIMED WRITE SEQUENCE (WORD or BYTE WRITE) Start WRITE 40H or 10H WRITE Word or Byte Address/Data STATUS REGISTER READ SR7 = 1? YES Complete Status Check (optional) WRITE Complete NOTE: 1. Sequence may ...
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SELF-TIMED BLOCK ERASE SEQUENCE Start WRITE 20H WRITE D0H, Block Address STATUS REGISTER READ NO SR7 = 1? Suspend ERASE? YES 2 Complete Status Check (optional) 3 ERASE Complete NOTE: 1. Sequence may be ...
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Smart 3 Boot Block Flash Memory F48.p65 – Rev. 1/00 SMART 3 BOOT BLOCK FLASH MEMORY ERASE SUSPEND/RESUME SEQUENCE Start (ERASE in progress) WRITE B0H (ERASE SUSPEND 3. STATUS REGISTER READ NO SR7 = ...
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ABSOLUTE MAXIMUM RATINGS* Voltage on V Supply CC Relative to V ................................ -0.5V to +6V** SS Input Voltage Relative to V ................ -0.5V to +6V Voltage Relative to V ............... -0.5V to +12. RP ...
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CAPACITANCE ( MHz) A PARAMETER/CONDITION Input Capacitance Output Capacitance READ AND STANDBY CURRENT DRAIN Commercial Temperature (0 C PARAMETER/CONDITION READ CURRENT: WORD-WIDE, CMOS INPUT LEVELS (CE# 0.2V; OE 0.2V ...
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READ TIMING PARAMETERS ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS Commercial Temperature ( CHARACTERISTICS PARAMETER READ cycle time Access time from CE# Access time from OE# Access time from address RP# HIGH to output valid delay OE# or ...
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V IH A0-A16/(A17 DQ0-DQ15 RWH TIMING PARAMETERS Commercial Temperature (0 C Extended Temperature ...
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1)-A16/(A17 DQ0-DQ7 DQ8-DQ14 RP TIMING ...
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RECOMMENDED DC WRITE/ERASE CONDITIONS Commercial Temperature (0 C PARAMETER/CONDITION V WRITE/ERASE lockout voltage PP V voltage during WRITE/ERASE operation PP V voltage during WRITE/ERASE operation PP V voltage during WRITE/ERASE operation PP Boot block unlock voltage V WRITE/ERASE lockout voltage ...
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SPEED-DEPENDENT WRITE/ERASE AC TIMING CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS Commercial Temperature ( CHARACTERISTICS PARAMETER WRITE cycle time WE# HIGH pulse width CE# HIGH pulse width Address setup time to WE# or CE# HIGH Data setup time to ...
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SPEED-DEPENDENT WRITE/ERASE AC TIMING CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS: WE#-CONTROLLED WRITES Commercial Temperature ( CHARACTERISTICS PARAMETER Address hold time from WE# HIGH Data hold time from WE# HIGH CE# setup time to WE# LOW CE# hold time ...
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SPEED-DEPENDENT WRITE/ERASE AC TIMING CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS: CE#-CONTROLLED WRITES Commercial Temperature ( CHARACTERISTICS PARAMETER Address hold time from CE# HIGH Data hold time from CE# HIGH WE# setup time to CE# LOW WE# hold time ...
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V IH A0-A16/(A17) Note CMD DQ0-DQ7 DQ0-DQ15 ...
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V IH A0-A16/(A17) Note CMD DQ0-DQ7 DQ0-DQ15 ...
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TYP PIN #1 INDEX NOTE: 1. All dimensions in inches (millimeters) MAX or typical where noted. 2. Package width and length do not include mold protrusion; allowable mold protrusion is .01” per side. 2Mb ...
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TYP 1 PIN #1 INDEX .010 (0.25) .006 (0.15) 24 .007 (0.18) .005 (0.12) NOTE: 1. All dimensions in inches (millimeters) MAX or typical where noted. 2. Package width and length do not include mold protrusion; allowable mold ...
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TYP 1 PIN #1 INDEX .010 (0.25) .006 (0.15) 20 .007 (0.18) .005 (0.13) NOTE: 1. All dimensions in inches (millimeters) MAX or typical where noted. 2. Package width and length do not include mold protrusion; allowable mold ...