MT48LC1M16A1TG-10S Micron Semiconductor Products, MT48LC1M16A1TG-10S Datasheet
MT48LC1M16A1TG-10S
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MT48LC1M16A1TG-10S Summary of contents
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... MHz clock rate) 10ns cycle time ( 100 MHz clock rate) 12ns cycle time ( 83 MHz clock rate) • Refresh with Self Refresh Mode at 64ms • Part Number Example: MT48LC1M16A1TG-8A S KEY TIMING PARAMETERS SPEED CLOCK ACCESS TIME GRADE ...
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GENERAL DESCRIPTION (continued) number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command, which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVE com- mand are ...
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CKE CLK CONTROL CS# LOGIC WE# CAS# RAS# MODE REGISTER 12 REFRESH ADDRESS CONTROLLER A0-A10 REGISTER REFRESH 11 COUNTER 11 16 Meg: x16 SDRAM Z06.pm6 – Rev. 10/97 FUNCTIONAL BLOCK DIAGRAM 1 Meg x 16 SDRAM BANK 0 ...
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PIN DESCRIPTIONS TSOP PIN NUMBERS SYMBOL 35 CLK 34 CKE 18 CS# 17, 15, RAS#, WE# Input 16 CAS# 14, 36 DQML, DQMH 19 BA 21-24, 27-32, 20 A0-A10 DQ0- 11, 12, 39, 40, ...
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FUNCTIONAL DESCRIPTION In general, the SDRAM is a dual 512K x 16 DRAM that operates at 3.3V and includes a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x ...
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A10 Reserved Mode CAS Latency BT *Should program M11, M10 = ensure compatibility with future devices ...
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If a READ command is registered at clock edge n, and the latency is m clocks, the data will be available by clock edge The DQs will start driving as a result of the clock edge one ...
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COMMANDS Truth Table 1 provides a quick reference of available commands. This is followed by a verbal description of each command. Two additional Truth Tables appear following TRUTH TABLE 1 – Commands and DQM Operation (Notes: 1) NAME (FUNCTION) COMMAND ...
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COMMAND INHIBIT The COMMAND INHIBIT function prevents new com- mands from being executed by the SDRAM, regardless of whether the CLK signal is enabled. The SDRAM is effec- tively deselected. Operations already in progress are not affected. NO OPERATION (NOP) ...
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AUTO REFRESH AUTO REFRESH is used during normal operation of the SDRAM and is analagous to CAS#-BEFORE-RAS# (CBR) REFRESH in conventional DRAMs. This command is non- persistent must be issued each time a refresh is required. The addressing ...
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OPERATION BANK/ROW ACTIVATION Before any READ or WRITE commands can be issued to a bank within the SDRAM, a row in that bank must be “opened.” This is accomplished via the ACTIVE command, which selects both the bank and the ...
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READs READ bursts are initiated with a READ command, as shown in Figure 5. The starting column and bank addresses are provided with the READ command and AUTO PRECHARGE is either enabled or disabled for that burst access. If AUTO ...
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The 1 Meg x 16 SDRAM uses a pipelined architecture and therefore ...
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CLK COMMAND ADDRESS DQ CAS Latency = 1 CLK COMMAND ADDRESS DQ CLK COMMAND ADDRESS DQ NOTE: Each READ command may be to either bank. DQM is LOW. RANDOM READ ACCESSES WITHIN A PAGE 16 Meg: x16 SDRAM Z06.pm6 – ...
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Data from any READ burst may be truncated with a subsequent WRITE command, and data from a fixed-length READ burst may be immediately followed by data from a subsequent WRITE command (subject to bus turnaround limitations). The WRITE burst may ...
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A fixed-length READ burst may be followed by, or trun- cated with, a PRECHARGE command to the same bank (provided that AUTO PRECHARGE was not activated) and a full-page burst may be truncated with a PRECHARGE command to the same ...
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AUTO PRECHARGE. The disadvantage of the PRECHARGE command is that it requires that the com- mand and address buses be available at the appropriate time to issue the command, but the advantage of the PRECHARGE command is that it ...
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WRITEs WRITE bursts are initiated with a WRITE command, as shown in Figure 13. The starting column and bank addresses are provided with the WRITE command and AUTO PRECHARGE is either enabled or disabled for that access. If AUTO PRECHARGE ...
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Figure 16. Data for any WRITE burst may be truncated with a subsequent READ command, and data for a fixed-length WRITE burst may be immediately followed by a ...
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Fixed-length or full-page WRITE bursts can be truncated with the BURST TERMINATE command. When truncating a WRITE burst, the input data applied coincident with the BURST TERMINATE command will be ignored. The last data written (provided that DQM is LOW ...
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CLOCK SUSPEND The clock suspend mode occurs when a column access/ burst is in progress and CKE is registered LOW. In the clock suspend mode, the internal clock is deactivated, “freezing” the synchronous logic. For each positive clock edge on ...
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TRUTH TABLE 2 – CKE (Notes: 1-4) CKE CKE CURRENT STATE n Power-Down Self Refresh Clock Suspend L H Power-Down Self Refresh Clock Suspend H L All Banks Idle All Banks Idle Reading or Writing H H ...
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TRUTH TABLE 3 – Current State Bank n - Command to Bank n (Notes: 1-6; notes appear below and on next page) CURRENT STATE CS# RAS# CAS# WE# Any Idle L ...
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NOTES (continued): 5. The following states must not be interrupted by any executable command; COMMAND INHIBIT or NOP commands must be applied on each positive clock edge during these states. Refreshing: Starts with registration of an AUTO REFRESH command and ...
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TRUTH TABLE 4 – Current State Bank n - Command to Bank m (Notes: 1-6, 8; notes appear below and on next page) CURRENT STATE CS# RAS# CAS# WE# Any Idle ...
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NOTES (continued): 3. Current state definitions: Idle: The bank has been precharged and Row Active: A row in the bank has been activated and accesses and no register accesses are in progress. Read: A READ burst has been initiated, with ...
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ABSOLUTE MAXIMUM RATINGS* Voltage Supply CC CC Relative to V .................................................... -1V to +4.6V SS Voltage on Inputs I/O Pins Relative to V .................................................... -1V to +4.6V SS Operating Temperature, T (ambient) .......... 0 ...
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CAPACITANCE PARAMETER Input Capacitance: CLK Input Capacitance: All other input-only pins Input/Output Capacitance: DQs ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (Notes 11 + CHARACTERISTICS PARAMETER Access time from CLK ...
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AC FUNCTIONAL CHARACTERISTICS (Notes 11 PARAMETER READ/WRITE command to READ/WRITE command CKE to clock disable or power-down entry mode CKE to clock enable or power-down exit setup mode DQM to input ...
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NOTES 1. All voltages referenced This parameter is sampled MHz dependent on output loading and cycle rates. CC Specified values are obtained ...
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INITIALIZE AND LOAD MODE REGISTER ( ( ) ) CLK ( ( CKH t CKS ( ( ( ( ) ) ) ) CKE ( ( ( ( ) ) ) ...
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CK CLK CKE t CKS t CKH t CMS t CMH COMMAND PRECHARGE NOP 2 DQM ADDRESS BANK(S) High-Z DQ Two clock cycles Precharge all All banks idle, enter active banks. power-down mode. TIMING PARAMETERS ...
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CLK t CKS t CKH CKE t CKS t CKH t CMS t CMH COMMAND READ NOP t CMS t CMH 3 DQM COLUMN m A0-A9 2 ( ...
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CLK t CK CKE t CKS t CKH t CMS t CMH COMMAND PRECHARGE NOP 1 DQM ADDRESS BANK(S) High Precharge all active banks. TIMING PARAMETERS -8A -10 SYMBOL* MIN MAX MIN MAX ...
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CLK t CK CKE t CKS t CKH t CMS t CMH COMMAND PRECHARGE NOP 1 DQM ADDRESS BANK(S) High Precharge all active banks. TIMING PARAMETERS -8A -10 SYMBOL* MIN MAX MIN MAX ...
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CLK t CKS t CKH CKE t CMS t CMH COMMAND ACTIVE NOP t CMS 3 DQM A0-A9 ROW ROW A10 DISABLE AUTO PRECHARGE ...
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CLK t CKS t CKH CKE t CMS t CMH COMMAND ACTIVE NOP t CMS 3 DQM A0-A9 ROW ENABLE AUTO PRECHARGE ROW A10 ...
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ALTERNATING BANK READ ACCESSES CLK t CKS t CKH CKE t CMS t CMH COMMAND ACTIVE NOP t CMS 3 DQM A0-A9 ROW ENABLE AUTO PRECHARGE ROW A10 ...
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CLK CKS t CKH CKE t CMS t CMH COMMAND ACTIVE NOP READ t CMS 3 DQM COLUMN m A0-A9 ROW ( ROW ...
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CK CLK t CKS t CKH CKE t CMS t CMH COMMAND ACTIVE NOP 3 DQM A0-A9 ROW ENABLE AUTO PRECHARGE ROW A10 DISABLE AUTO PRECHARGE ...
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WRITE – WITHOUT AUTO PRECHARGE t CK CLK t CKS t CKH CKE t CMS t CMH COMMAND ACTIVE NOP t CMS 3 DQM A0-A9 ROW ROW A10 DISABLE AUTO PRECHARGE t ...
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CK CLK t CKS t CKH CKE t CMS t CMH COMMAND ACTIVE NOP t CMS 3 DQM A0-A9 ROW ENABLE AUTO PRECHARGE ROW A10 BANK ...
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ALTERNATING BANK WRITE ACCESSES t CK CLK t CKS t CKH CKE t CMS t CMH COMMAND ACTIVE NOP t CMS 3 DQM A0-A9 ROW ENABLE AUTO PRECHARGE ROW A10 t AS ...
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CL CLK CKS t CKH CKE t CMS t CMH COMMAND ACTIVE NOP 2 DQM A0-A9 ROW ROW A10 BANK DQ t RCD ...
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CK CLK t CKS t CKH CKE t CMS t CMH COMMAND ACTIVE NOP 3 DQM A0-A9 ROW ROW A10 BANK DQ t RCD TIMING PARAMETERS ...
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TYP PIN # .039 (1.00) (2X) 1. All dimensions in inches (millimeters) MAX or typical where noted. NOTE: 2. Package width and length do not ...