M29F002BT70K1T SGS-Thomson-Microelectronics, M29F002BT70K1T Datasheet

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M29F002BT70K1T

Manufacturer Part Number
M29F002BT70K1T
Description
2 MBIT (256KB X8, BOOT BLOCK) SINGLE SUPPLY FLASH MEMORY
Manufacturer
SGS-Thomson-Microelectronics
Datasheet
October 1999
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
SINGLE 5V
PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 45ns
PROGRAMMING TIME
– 8 s by Byte typical
7 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 4 Main Blocks
PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
TEMPORARY BLOCK UNPROTECTION
MODE
LOW POWER CONSUMPTION
– Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– M29F002BT Device Code: B0h
– M29F002BNT Device Code: B0h
– M29F002BB Device Code: 34h
Erase Suspend
2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory
10% SUPPLY VOLTAGE for
M29F002BB, M29F002BNT
Figure 1. Logic Diagram
A0-A17
PLCC32 (K)
RP
W
G
E
32
18
1
M29F002BNT
V CC
M29F002BB
M29F002BT
V SS
PDIP32 (P)
M29F002BT
PRELIMINARY DATA
TSOP32 (N)
8 x 20mm
8
DQ0-DQ7
AI02957
1/22

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M29F002BT70K1T Summary of contents

Page 1

Mbit (256Kb x8, Boot Block) Single Supply Flash Memory SINGLE 5V 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45ns PROGRAMMING TIME – Byte typical 7 MEMORY BLOCKS – 1 Boot Block (Top ...

Page 2

M29F002BT, M29F002BB, M29F002BNT Figure 2A. PLCC Connections M29F002BT M29F002BB DQ0 17 Figure 2C. PDIP Connections A16 2 31 A15 3 30 A12 ...

Page 3

Table 2. Absolute Maximum Ratings Symbol Ambient Operating Temperature (Temperature Range Option 1) T Ambient Operating Temperature (Temperature Range Option 6) A Ambient Operating Temperature (Temperature Range Option 3) T Temperature Under Bias BIAS T Storage Temperature STG (2) Input ...

Page 4

M29F002BT, M29F002BB, M29F002BNT Table 3A. M29F002BT, M29F002BNT Block Addresses Size (Kbytes) Address Range 16 3C000h-3FFFFh 8 3A000h-3BFFFh 8 38000h-39FFFh 32 30000h-37FFFh 64 20000h-2FFFFh 64 10000h-1FFFFh 64 00000h-0FFFFh A Hardware Reset is achieved by holding Reset/ Block Temporary Unprotect Low, V ...

Page 5

Table 4. Bus Operations Operation E V Bus Read IL V Bus Write IL Output Disable X Standby V IH Read Manufacturer V IL Code Read Device Code V IL Note Standby. ...

Page 6

M29F002BT, M29F002BB, M29F002BNT COMMAND INTERFACE All Bus Write operations to the memory are inter- preted by the Command Interface. Commands consist of one or more sequential Bus Write oper- ations. Failure to observe a valid sequence of Bus Write operations ...

Page 7

Table 5. Commands Command 1st Addr Data Read/Reset 3 555 AA Auto Select 3 555 AA Program 4 555 AA Unlock Bypass 3 555 AA Unlock Bypass Program Unlock Bypass Reset ...

Page 8

M29F002BT, M29F002BB, M29F002BNT Table 6. Program, Erase Times and Program, Erase Endurance Cycles ( – –40 to 125 C) A Parameter Chip Erase (All bits in the memory set to ‘0’) ...

Page 9

Table 7. Status Register Bits Operation Address Program Any Address Program During Erase Any Address Suspend Program Error Any Address Chip Erase Any Address Erasing Block Block Erase before timeout Non-Erasing Block Erasing Block Block Erase Non-Erasing Block Erasing Block ...

Page 10

M29F002BT, M29F002BB, M29F002BNT Figure 3. Data Polling Flowchart START READ DQ5 & DQ7 at VALID ADDRESS DQ7 YES = DATA NO NO DQ5 = 1 YES READ DQ7 DQ7 YES = DATA NO FAIL Erase Timer Bit (DQ3). The Erase ...

Page 11

Table 8. AC Measurement Conditions Parameter AC Test Conditions Load Capacitance ( Input Rise and Fall Times Input Pulse Voltages Input and Output Timing Ref. Voltages Figure 5. AC Testing Input Output Waveform High Speed 3V 0V Standard ...

Page 12

M29F002BT, M29F002BB, M29F002BNT Table 10. DC Characteristics ( – –40 to 125 C) A Symbol Parameter (1) Input Leakage Current Leakage Current High LR1 I RP Leakage ...

Page 13

Table 11. Read AC Characteristics ( – –40 to 125 C) Symbol Alt Parameter t t Address Valid to Next Address Valid AVAV Address Valid to Output Valid ...

Page 14

M29F002BT, M29F002BB, M29F002BNT Table 12. Write AC Characteristics, Write Enable Controlled ( – –40 to 125 C) A Symbol Alt t t Address Valid to Next Address Valid AVAV WC t ...

Page 15

Table 13. Write AC Characteristics, Chip Enable Controlled ( – –40 to 125 C) A Symbol Alt t t Address Valid to Next Address Valid AVAV Write Enable ...

Page 16

M29F002BT, M29F002BB, M29F002BNT Table 14. Reset/Block Temporary Unprotect AC Characteristics ( – –40 to 125 C) Symbol Alt (1) t PHWL RP High to Write Enable Low, Chip Enable t t ...

Page 17

Table 15. Ordering Information Scheme Example: Device Type M29 Operating Voltage 10% CC Device Function 002B = 2 Mbit (256Kb x8), Boot Block Array Matrix T = Top Boot NT = Top Boot, No Reset/Block ...

Page 18

M29F002BT, M29F002BB, M29F002BNT Table 16. Revision History Date July 1999 First Issue Chip Erase Max. specification added (Table 6) Block Erase Max. specification added (Table 6) Program Max. specification added (Table 6) Chip Program Max. specification added (Table 6) 10/07/99 ...

Page 19

Table 17. PLCC32 - 32 lead Plastic Leaded Chip Carrier, rectangular, Package Mechanical Data Symbol Typ 12.32 D1 11. 14.86 E1 13.89 E2 12. ...

Page 20

M29F002BT, M29F002BB, M29F002BNT Table 18. TSOP32 - 32 lead Plastic Thin Small Outline 20mm, Package Mechanical Data Symbol Typ 19.80 D1 18. 0. Figure 12. TSOP32 - ...

Page 21

Table 19. PDIP32 - 32 lead Plastic DIP, 600 mils width, Package Mechanical Data Symbol Typ 1. 41.78 D2 38.10 E 15.24 E1 13.59 e1 2.54 eA 15.24 eB 15. ...

Page 22

M29F002BT, M29F002BB, M29F002BNT Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result ...

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