IS41LV16400-50TI Integrated Silicon Solution, IS41LV16400-50TI Datasheet

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IS41LV16400-50TI

Manufacturer Part Number
IS41LV16400-50TI
Description
3.3V 4M x 16(64-MBIT) dynamic RAM with edo page mode
Manufacturer
Integrated Silicon Solution
Datasheet
IS41LV16400
4M x 16 (64-MBIT) DYNAMIC RAM
WITH EDO PAGE MODE
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 1999, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
11/18/99
PIN CONFIGURATION
50-Pin TSOP (Type II)
FEATURES
• Extended Data-Out (EDO) Page Mode access cycle
• TTL compatible inputs and outputs; tristate I/O
• Refresh Interval: 4,096 cycles / 64 ms
• Auto refresh Mode: RAS-Only, CAS-before-RAS
• Low Standby power dissipation:
• Single power supply: 3.3V ± 10%
• Byte Write and Byte Read operation via two CAS
• Extended Temperature Range -30
• Industrail Temperature Range -40
(CBR), and Hidden
– 1.8mW(max) CMOS Input Level
VCC
VCC
VCC
VCC
RAS
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
NC
NC
NC
NC
NC
A0
A1
A2
A3
A4
A5
W
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
o
o
C to 85
C to 85
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
I/O8
NC
GND
LCAS
UCAS
OE
NC
NC
NC
A11
A10
A9
A8
A7
A6
GND
o
o
C
C
DESCRIPTION
The ISSI IS41LV16400 is 4,194,304 x 16-bit high-perfor-
mance CMOS
These devices offer an accelerated cycle access called
EDO Page Mode. EDO Page Mode allows 1,024 random
accesses within a single row with access cycle time as
short as 20 ns per 16-bit word. The Byte Write control, of
upper and lower byte, makes the IS41LV16400 ideal for
use in 16-bit wide data bus systems.
These features make the S41LV16400 ideally suited for
high-bandwidth graphics, digital signal processing,
applications.
The IS41LV16400 is packaged in a 50-pin TSOP (Type II).
JEDEC standard pinout.
PIN DESCRIPTIONS
KEY TIMING PARAMETERS
high-performance computing systems, and peripheral
A0-A11
I/O0-15
WE
OE
RAS
UCAS
LCAS
Vcc
GND
NC
Parameter
Max. RAS Access Time (t
Max. CAS Access Time (t
Max. Column Address Access Time (t
Min. EDO Page Mode Cycle Time (t
Min. Read/Write Cycle Time (t
Data Inputs/Outputs
Write Enable
Output Enable
Row Address Strobe
Upper Column Address Strobe
Lower Column Address Strobe
Power
Ground
No Connection
Address Inputs
Dynamic Random Access Memories.
RAC
CAC
)
)
RC
)
PC
ISSI
AA
)
)
-50
NOVEMBER 1999
50
13
25
20
84
104
-60
60
15
30
25
Unit
ns
ns
ns
ns
ns
®
1

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IS41LV16400-50TI Summary of contents

Page 1

... These features make the S41LV16400 ideally suited for high-bandwidth graphics, digital signal processing, high-performance computing systems, and peripheral applications The IS41LV16400 is packaged in a 50-pin TSOP (Type II). JEDEC standard pinout PIN DESCRIPTIONS A0-A11 I/O0-15 ...

Page 2

... IS41LV16400 FUNCTIONAL BLOCK DIAGRAM OE WE CAS LCAS CLOCK UCAS GENERATOR RAS RAS RAS CLOCK GENERATOR REFRESH COUNTER ADDRESS BUFFERS A0-A11 2 WE CONTROL CAS WE LOGICS DATA I/O BUS COLUMN DECODERS SENSE AMPLIFIERS MEMORY ARRAY 4,194,304 x 16 Integrated Silicon Solution, Inc. — 1-800-379-4774 ISSI ® ...

Page 3

... IS41LV16400 TRUTH TABLE Function Standby Read: Word Read: Lower Byte Read: Upper Byte Write: Word (Early Write) Write: Lower Byte (Early Write) Write: Upper Byte (Early Write) (1,2) Read-Write EDO Page-Mode Read (2) 1st Cycle: 2nd Cycle: Any Cycle: EDO Page-Mode Write (1) 1st Cycle: ...

Page 4

... I/O tristate logic (in conjunction with OE and WE and RAS). LCAS controls I/O0 through I/O7 and UCAS controls I/O8 through I/O15. The IS41LV16400 CAS function is determined by the first CAS (LCAS or UCAS) transitioning LOW and the last transitioning back HIGH. The two CAS controls give the IS41LV16400 both BYTE READ and BYTE WRITE cycle capabilities ...

Page 5

... IS41LV16400 ABSOLUTE MAXIMUM RATINGS Symbol Parameters V Voltage on Any Pin Relative to GND T V Supply Voltage CC I Output Current OUT P Power Dissipation D T Commercial Operation Temperature A Extended Temperature Industrail Temperature T Storage Temperature STG Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device ...

Page 6

... IS41LV16400 ELECTRICAL CHARACTERISTICS (Recommended Operating Conditions unless otherwise noted.) Symbol Parameter I Input Leakage Current IL I Output Leakage Current IO V Output High Voltage Level OH V Output Low Voltage Level Standby Current: TTL Standby Current: CMOS Operating Current: CC Random Read/Write ...

Page 7

... IS41LV16400 AC CHARACTERISTICS (1,2,3,4,5,6) (Recommended Operating Conditions unless otherwise noted.) Symbol Parameter t Random READ or WRITE Cycle Time RC Access Time from RAS t RAC Access Time from CAS t CAC t Access Time from Column-Address AA RAS Pulse Width t RAS RAS Precharge Time t RP CAS Pulse Width t CAS ...

Page 8

... IS41LV16400 AC CHARACTERISTICS (Continued) (Recommended Operating Conditions unless otherwise noted.) Symbol Parameter WE Pulse Widths to Disable Outputs t WPZ Write Command to RAS Lead Time t RWL Write Command to CAS Lead Time t CWL t Write Command Setup Time WCS Data-in Hold Time (referenced to RAS) t DHR Column-Address Setup Time to CAS ...

Page 9

... IS41LV16400 Notes initial pause of 200 µs is required after power-up followed by eight RAS refresh cycle (RAS-Only or CBR) before proper device operation is assured. The eight RAS cycles wake-up should be repeated any time the (MIN) and V (MAX) are reference levels for measuring timing of input signals. Transition times, are measured between V ...

Page 10

... IS41LV16400 READ CYCLE RAS t CRP UCAS/LCAS t ASR ADDRESS Row WE I/O OE Note: is referenced from rising edge of RAS or CAS, whichever occurs last OFF RAS t CSH t RSH RCD CAS CLCH RAD RAL t t RAH ASC Column t RCS t AA ...

Page 11

... IS41LV16400 EARLY WRITE CYCLE (OE = DON'T CARE) RAS t CRP UCAS/LCAS t ASR ADDRESS Row WE I/O Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. A 11/18/ RAS t CSH t RSH CAS CLCH RCD RAD RAL RAH CAH ASC t ACH Column t CWL t RWL t WCR ...

Page 12

... IS41LV16400 READ WRITE CYCLE (LATE WRITE and READ-MODIFY-WRITE Cycles) RAS t CRP UCAS/LCAS t ASR ADDRESS Row WE I RWC t RAS t CSH t t CAS RCD RAD RAH ASC CAH Column t RWD t t RCS CWD t AWD RAC t CAC t CLZ Open Valid D ...

Page 13

... IS41LV16400 EDO-PAGE-MODE READ CYCLE RAS t CRP UCAS/LCAS t RAD t ASR ADDRESS Row t RAH WE Open I/O OE Note: can be measured from falling edge of CAS to falling edge of CAS, or from rising edge of CAS to rising edge of CAS. Both measurements must meet the t specifications. PC Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev ...

Page 14

... IS41LV16400 EDO-PAGE-MODE EARLY-WRITE CYCLE RAS t CRP UCAS/LCAS t RAD t ASR ADDRESS Row t RAH WE I RASP t CSH RCD CAS, CP CAS CLCH CLCH ACH ACH ASC CAH ASC Column Column t t CWL CWL t t WCS WCS ...

Page 15

... IS41LV16400 EDO-PAGE-MODE READ-WRITE CYCLE (LATE WRITE and READ-MODIFY WRITE Cycles) RAS t CSH t t CRP RCD UCAS/LCAS ASR RAD t t ASC RAH ADDRESS Row t RWD t RCS WE t RAC t CAC t CLZ Open I/O OE Note: can be measured from falling edge of CAS to falling edge of CAS, or from rising edge of CAS to rising edge of CAS. Both 1 ...

Page 16

... IS41LV16400 EDO-PAGE-MODE READ-EARLY-WRITE CYCLE (Psuedo READ-MODIFY WRITE) RAS t CSH t t CRP RCD UCAS/LCAS ASR RAD t t ASC RAH ADDRESS Row t RCS WE t RAC t CAC Open I RASP CAS CP CAS CAH ASC CAH Column (A) Column (B) t RCH ...

Page 17

... IS41LV16400 AC WAVEFORMS READ CYCLE (With WE-Controlled Disable) RAS t CRP UCAS/LCAS t ASR ADDRESS Row WE I/O OE RAS-ONLY REFRESH CYCLE (OE DON'T CARE) RAS t CRP UCAS/LCAS t ASR ADDRESS I/O Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. A 11/18/99 t CSH t t RCD CAS RAD t t RAH ...

Page 18

... IS41LV16400 CBR REFRESH CYCLE (Addresses; WE DON'T CARE) t RAS t RPC t CP UCAS/LCAS I/O HIDDEN REFRESH CYCLE (1) RAS t CRP UCAS/LCAS t ASR ADDRESS Row I/O OE Notes Hidden Refresh may also be performed after a Write Cycle. In this case LOW and OE = HIGH. is referenced from rising edge of RAS or CAS, whichever occurs last. ...

Page 19

... TSOP (Type II) IS41LV16400-60T 400-mil TSOP (Type II) Order Part No. Package IS41LV16400-50TE 400-mil TSOP (Type II) IS41LV16400-60TE 400-mil TSOP (Type II) Order Part No. Package IS41LV16400-50TI 400-mil TSOP (Type II) IS41LV16400-60TI 400-mil TSOP (Type II) Integrated Silicon Solution, Inc. ISSI ® ISSI ® 2231 Lawson Lane Santa Clara, CA 95054 ...

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