MMBT9015 Unisonic Technologies, MMBT9015 Datasheet

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MMBT9015

Manufacturer Part Number
MMBT9015
Description
Manufacturer
Unisonic Technologies
Datasheet

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UTC MMBT9015
PRE-AMPLIFIER, LOW LEVEL &
LOW NOISE
FEATURES
*High total power dissipation. (450mW)
*Excellent hFE linearity.
*Complementary to UTC MMBT9014
MARKING
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
UTC
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Current gain-Bandwidth Porduct
Base-emitter saturation voltage
15
Base-emitter on voltage
Collector cutoff current
Emitter cutoff current
Output Capacitance
DC current gain
PARAMETER
Noise Figure
PARAMETER
UNISONIC TECHNOLOGIES CO., LTD.
PNP EPITAXIAL SILICON TRANSISTOR
SYMBOL
V
V
V
BV
BV
BV
CE
BE
BE
I
I
hFE
Cob
CBO
EBO
NF
fT
CBO
CEO
EBO
(sat)
(sat)
(on)
(Ta=25°C, unless otherwise specified)
SYMBOL
(Ta=25°C, unless otherwise specified)
V
V
V
T
Pc
CBO
CEO
EBO
STG
Ic
T
j
V
TEST CONDITIONS
CB
Ic=-100mA, I
Ic=-100mA, I
V
V
V
V
CE
f=1KHz, Rs=1KΩ
=-10V, I
CE
Ic=-100µA, I
I
V
CE
CE
E
V
Ic=-1mA, I
CB
=-100µA, Ic=0
=-5V, Ic=-0.2mA
=-5V, Ic=-10mA
EB
=-5V, Ic=-1mA
=-5V, Ic=-2mA
=-50V, I
=-5V, I
E
=0, f=1MHz
1: EMITTER 2: BASE 3: COLLECTOR
B
B
B
C
=-5mA
=-5mA
E
E
=0
=0
=0
=0
-55 ~ +150
RATING
-100
225
150
-50
-45
-5
1
MIN
-0.6
100
-50
-45
60
-5
2
-0.82
-0.65
TYP
-0.2
200
190
4.5
0.7
3
SOT-23
MAX
-0.75
UNIT
-100
600
-0.7
-1.0
mW
-50
7.0
QW-R206-023,A
10
mA
°C
°C
V
V
V
UNIT
MHz
dB
nA
nA
pF
V
V
V
V
V
V
1

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MMBT9015 Summary of contents

Page 1

... UTC MMBT9015 PNP EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. (450mW) *Excellent hFE linearity. *Complementary to UTC MMBT9014 MARKING 15 ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction Temperature ...

Page 2

... UTC MMBT9015 PNP EPITAXIAL SILICON TRANSISTOR CLASSIFICATION OF hFE RANK A RANGE 60-150 UTC UNISONIC TECHNOLOGIES CO., LTD 100-300 200-600 QW-R206-023,A 2 ...

Page 3

... UTC MMBT9015 PNP EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein ...

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