MT28F400B5WG-8T Micron Semiconductor Products, MT28F400B5WG-8T Datasheet
MT28F400B5WG-8T
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MT28F400B5WG-8T Summary of contents
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... PP with no loss of performance. 2. Contact factory for availability. Part Number Example: MT28F400B5WG-8 T 4Mb Smart 5 Boot Block Flash Memory MT28F004B5_3.fm - Rev. 3, Pub. 8/2002 PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE . SMART 5 BOOT BLOCK FLASH MEMORY ...
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... Order Number and Part Marking MT28F400B5WG-8 B MT28F400B5WG-8 T MT28F400B5WG-8 BET MT28F400B5WG-8 TET Notes: 1. Contact factory for availability. 4Mb Smart 5 Boot Block Flash Memory MT28F004B5_3.fm - Rev. 3, Pub. 8/2002 SMART 5 BOOT BLOCK FLASH MEMORY Pin Assignment (Top View) 48 A16 47 BYTE ...
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BYTE# I/O Control Logic Addr. A0–A17/(18) Buffer/ Latch A9 Power (Current) Control WP# CE# Command OE# Execution WE# Logic RP Notes: 1. Does not apply to MT28F004B5. 4Mb Smart 5 Boot Block Flash Memory MT28F004B5_3.fm ...
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PIN DESCRIPTIONS 40-PIN 48-PIN 44-PIN SOP TSOP TSOP NUMBERS NUMBERS NUMBERS – 47 11, 10 21, 20, 19, 25, 24, 23, 7, ...
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TRUTH TABLE (MT28F400B5) FUNCTION RP# H Standby Reset L READ READ (word mode READ (byte mode) Output Disable H WRITE/ERASE (EXCEPT BOOT BLOCK) ERASE SETUP ERASE CONFIRM H WRITE SETUP 4 WRITE (word mode) H ...
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TRUTH TABLE (MT28F004B5) FUNCTION Standby RESET READ READ Output Disable WRITE/ERASE (EXCEPT BOOT BLOCK)2 ERASE SETUP 3 ERASE CONFIRM WRITE SETUP 4 WRITE 5 READ ARRAY 2 WRITE/ERASE (BOOT BLOCK) ERASE SETUP 3 ERASE CONFIRM 3, 6 ERASE CONFIRM WRITE ...
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FUNCTIONAL DESCRIPTION The MT28F004B5 and MT28F400B5 Flash memo- ries incorporate a number of features ideally suited for system firmware. The memory array is segmented into individual erase blocks. Each block may be erased without affecting data stored in other blocks. ...
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V status, write status, and erase status. Command Execution Logic (CEL) The CEL receives and interprets commands to the device. These commands control the operation of the ISM and the read ...
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Bottom Boot MT28F004B5/400B5xx-xxB WORD ADDRESS BYTE ADDRESS 3FFFFh 7FFFFh 128KB Main Block 30000h 60000h 2FFFFh 5FFFFh 128KB Main Block 20000h 40000h 1FFFFh 3FFFFh 128KB Main Block 10000h 20000h 0FFFFh 1FFFFh 96KB Main Block 04000h 08000h 03FFFh 07FFFh 8KB Parameter Block ...
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OUTPUT (READ) OPERATIONS The MT28F004B5 and MT28F400B5 feature three different types of READS. Depending on the current mode of the device, a READ operation produces data from the memory array, status register or device iden- tification register. In each of ...
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Memory Array A WRITE to the memory array sets the desired bits to logic 0s but cannot change a given bit to a logic 1 from a logic 0. Setting any bits to a logic 1 requires that the entire ...
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ISM STATUS REGISTER The 8-bit ISM status register (see Table 2) is polled to check for WRITE or ERASE completion or any related errors. During or following a WRITE, ERASE or ERASE SUSPEND, a READ operation outputs the sta- tus ...
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COMMAND EXECUTION Commands are issued to bring the device into dif- ferent operational modes. Each mode allows specific operations to be performed. Several modes require a sequence of commands to be written before they are reached. The following section describes ...
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ERASE Sequence Executing an ERASE sequence sets all bits within a block to logic 1. The command sequence necessary to execute an ERASE is similar to that of a WRITE. To pro- vide added security against accidental block erasure, two ...
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WRITE/ERASE CYCLE ENDURANCE The MT28F004B5 and MT28F400B5 are designed and fabricated to meet advanced firmware storage requirements. To ensure this level of reliability, V must ±10% during WRITE or ERASE cycles. Due to process technology advances, 5V ...
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Self-Timed WRITE Sequence (WORD or BYTE WRITE)1 Start WRITE 40h or 10h WRITE Word or Byte Address/Data STATUS REGISTER READ SR7 = 1? YES Complete Status Check (optional) WRITE Complete Notes: 1. Sequence may be repeated ...
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Self-Timed BLOCK ERASE Sequence Start WRITE 20h WRITE D0h, Block Address STATUS REGISTER READ NO SR7 = 1? Suspend ERASE? YES 2 Complete Status Check (optional) 3 ERASE Complete Notes: 1. Sequence may be repeated to ...
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Smart 5 Boot Block Flash Memory MT28F004B5_3.fm - Rev. 3, Pub. 8/2002 SMART 5 BOOT BLOCK FLASH MEMORY ERASE SUSPEND/RESUME Sequence Start (ERASE in progress) WRITE B0h (ERASE SUSPEND STATUS REGISTER READ NO SR7 = ...
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ABSOLUTE MAXIMUM RATINGS* Voltage on V Supply Relative Input Voltage Relative to V ....................-0.5V to +6V Voltage Relative to V ...................... -0.5V to +5. RP Pin Voltage Relative to Vss ................................... ...
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CAPACITANCE (T = +25º MHz) A PARAMETER/CONDITION Input Capacitance Output Capacitance READ AND STANDBY CURRENT DRAIN (Note: 1) Commercial Temperature (0ºC £ T PARAMETER/CONDITION READ CURRENT: WORD-WIDE, TTL INPUT LEVELS (CE OE ...
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READ TIMING PARAMETERS ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS Commercial Temperature (0ºC £ CHARACTERISTICS PARAMETER Read cycle time Access time from CE# Access time from OE# Access time from address RP# HIGH to output valid delay OE# ...
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AC TEST CONDITIONS Input pulse levels ..................................0.4V to 2.4V Input rise and fall times ................................. <10ns Input timing reference level ................ 0.8V and 2V Output timing reference level ............. 0.8V and 2V Output load ...................1 TTL gate and C V ...
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1)-A17/(A18 DQ0-DQ7 DQ8-DQ14 RP TIMING PARAMETERS Commercial ...
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RECOMMENDED DC WRITE/ERASE CONDITIONS Commercial Temperature (0ºC £ T PARAMETER/CONDITION V WRITE/ERASE lockout voltage PP V voltage during WRITE/ERASE operation PP Boot block unlock voltage V WRITE/ERASE lockout voltage CC WRITE/ERASE CURRENT DRAIN Commercial Temperature (0ºC £ T PARAMETER/CONDITION WORD ...
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SPEED-DEPENDENT WRITE/ERASE AC TIMING CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS: WE#- (CE#-)CONTROLLED WRITES Commercial Temperature (0ºC £ T +5V ±5% AC CHARACTERISTICS PARAMETER WRITE cycle time WE# HIGH pulse width WE# pulse width Address setup time to WE# HIGH Address ...
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V IH A0–A17/(A18) Note DQ0–DQ7/ CMD 2 DQ0–DQ15 ...
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Either RP WP# HIGH unlocks the boot block Measurements tested under AC Test Condition 1, V 4Mb Smart 5 Boot Block Flash Memory MT28F004B5_3.fm - Rev. 3, Pub. 8/2002 SMART 5 BOOT BLOCK FLASH ...
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V IH A0–A17/(A18) Note DQ0–DQ7/ CMD 2 DQ0–DQ15 ...
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Measurements tested under AC Test Condition 1, V 1.113 (28.27) 1.107 (28.12) .050 (1.27) TYP PIN #1 INDEX Notes: 1. Contact factory for availability 2. All dimensions in millimeters MAX/MIN or typical where noted. 3. Package width and length ...
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TYP 1 PIN #1 INDEX .010 (0.25) .006 (0.15) 20 .007 (0.18) .005 (0.13) Notes: 1. All dimensions in millimeters MAX/MIN or typical where noted. 2. Package width and length do not include mold protrusion; allowable mold protrusion ...
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TYP 1 PIN #1 INDEX .010 (0.25) .006 (0.15) 24 .007 (0.18) .005 (0.12) Notes: 1. All dimensions in millimeters MAX/MIN or typical where noted. 2. Package width and length do not include mold protrusion; allowable mold protrusion ...
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REVISION HISTORY Rev. 3, ...............................................................................................................................................................................8/02 • Removed PRELIMINARY designation t • Changed RS (MIN) from 600ns to 1,000ns • Changed V (MAX)from 0.45V to 0.50V OL Rev. 2, PRELIMINARY....................................................................................................................................................12/01 • Updated input capacitance specification t • Updated RWH specification Original ...