SST32HF164-90-4C-TBK Silicon Storage Technology, Inc, SST32HF164-90-4C-TBK Datasheet

SST32HF164-90-4C-TBK

Manufacturer Part Number

SST32HF164-90-4C-TBK

Description

Multi-purpose (MPF) + SRAM combo-memory

Manufacturer

Silicon Storage Technology, Inc

Datasheet

1.SST32HF164-90-4C-TBK.pdf (28 pages)

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FEATURES:

• MPF + SRAM ComboMemory

• Single 2.7-3.3V Read and Write Operations

• Concurrent Operation

• Superior Reliability

• Low Power Consumption:

• Flexible Erase Capability

• Fast Read Access Times:

PRODUCT DESCRIPTION

The SST32HF802/162/164 ComboMemory devices inte-

grate a 512K x16 or 1M x16 CMOS flash memory bank

with a 128K x16 or 256K x16 CMOS SRAM memory bank

in a Multi-Chip Package (MCP), manufactured with SST’s

proprietary, high performance SuperFlash technology.

Featuring high performance Word-Program, the flash

memory bank provides a maximum Word-Program time of

14 µsec. The entire flash memory bank can be erased and

programmed word-by-word in typically 8 seconds for the

SST32HF802 and 15 seconds for the SST32HF162/164,

when using interface features such as Toggle Bit or Data#

Polling to indicate the completion of Program operation. To

protect against inadvertent flash write, the SST32HF802/

162/164 devices contain on-chip hardware and software

data protection

devices offer a guaranteed endurance of 10,000 cycles.

Data retention is rated at greater than 100 years.

The SST32HF802/162/164 devices consist of two inde-

pendent memory banks with respective bank enable sig-

nals. The Flash and SRAM memory banks are

superimposed in the same memory address space. Both

memory banks share common address lines, data lines,

WE# and OE#. The memory bank selection is done by

memory bank enable signals. The SRAM bank enable sig-

nal, BES# selects the SRAM bank. The flash memory

S71171-05-000 8/01

– SST32HF802: 512K x16 Flash + 128K x16 SRAM

– SST32HF162: 1M x16 Flash + 128K x16 SRAM

– SST32HF164: 1M x16 Flash + 256K x16 SRAM

– Read from or write to SRAM while

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

– Active Current: 15 mA (typical) for

– Standby Current: 20 µA (typical)

– Uniform 2 KWord sectors

– Uniform 32 KWord size blocks

– Flash: 70 ns and 90 ns

– SRAM: 70 ns and 90 ns

Multi-Purpose Flash (MPF) + SRAM ComboMemory

Erase/Program Flash

Flash or SRAM Read

schemes.The

SST32HF802 / 162 / 164MPF (x16) + 1Mb SRAM (x16) ComboMemories

520

SST32HF802 / SST32HF162 / SST32HF164

SST32HF802/162/164

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

• Latched Address and Data for Flash

• Flash Fast Erase and Word-Program:

• Flash Automatic Erase and Program Timing

• Flash End-of-Write Detection

• CMOS I/O Compatibility

• JEDEC Standard Command Set

• Package Available

bank enable signal, BEF# selects the flash memory bank.

The WE# signal has to be used with Software Data Protec-

tion (SDP) command sequence when controlling the Erase

and Program operations in the flash memory bank. The

SDP command sequence protects the data stored in the

flash memory bank from accidental alteration.

The SST32HF802/162/164 provide the added functionality

of being able to simultaneously read from or write to the

SRAM bank while erasing or programming in the flash

memory bank. The SRAM memory bank can be read or

written while the flash memory bank performs Sector-

Erase, Bank-Erase, or Word-Program concurrently. All

flash memory Erase and Program operations will automati-

cally latch the input address and data signals and complete

the operation in background without further input stimulus

requirement. Once the internally controlled erase or pro-

gram cycle in the flash bank has commenced, the SRAM

bank can be accessed for read or write.

The SST32HF802/162/164 devices are suited for applica-

tions that use both flash memory and SRAM memory to

store code or data. For systems requiring low power and

small form factor, the SST32HF802/162/164 devices signif-

icantly improve performance and reliability, while lowering

power consumption, when compared with multiple chip

solutions. The SST32HF802/162/164 inherently use less

energy during erase and program than alternative flash

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Word-Program Time: 14 µs (typical)

– Chip Rewrite Time:

– Internal V

– Toggle Bit

– Data# Polling

– 48-lead TSOP (12mm x 20mm)

– 48-ball TBGA (10mm x 12mm)

SST32HF802: 8 seconds (typical)

SST32HF162/164: 15 seconds (typical)

MPF and ComboMemory are trademarks of Silicon Storage Technology, Inc.

Generation

These specifications are subject to change without notice.

Data Sheet

Related parts for SST32HF164-90-4C-TBK

SST32HF164-90-4C-TBK Summary of contents

Page 1

... MPF + SRAM ComboMemory – SST32HF802: 512K x16 Flash + 128K x16 SRAM – SST32HF162: 1M x16 Flash + 128K x16 SRAM – SST32HF164: 1M x16 Flash + 256K x16 SRAM • Single 2.7-3.3V Read and Write Operations • Concurrent Operation – Read from or write to SRAM while Erase/Program Flash • ...

Page 2

... SRAM Operation With BES# low and BEF# high, the SST32HF802/162 operate as 128K x16 CMOS SRAM, and the SST32HF164 operates as 256K x16 CMOS SRAM, with fully static oper- ation requiring no external clocks or timing strobes. The SST32HF802/162 SRAM is mapped into the first 128 KWord address space of the device, and the SST32HF164 SRAM is mapped into the first 256 KWord address space ...

Page 3

... Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 Data Sheet are latched on the falling edge of either BEF# or WE#, whichever occurs last. The data is latched on the rising edge of either BEF# or WE#, whichever occurs first. The third step is the internal Program operation which is initi- ated after the rising edge of the fourth WE# or BEF#, whichever occurs first ...

Page 4

... Program/Erase Program/Erase ©2001 Silicon Storage Technology, Inc. Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 The device will ignore all SDP commands when an Erase or Program operation is in progress. Note that Product Identification commands use SDP; therefore, these com- mands will also be ignored while an Erase or Program operation is in progress ...

Page 5

... Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 Data Sheet UNCTIONAL LOCK IAGRAM Address Buffers UBS# LBS# BES# Control Logic BEF# OE# WE# Address Buffers & Latches SST32HF162/164 A15 1 A14 2 A13 3 A12 4 A11 5 A10 A19 WE# ...

Page 6

... Power Supply (SRAM) DDS V Ground SS UBS# Upper Byte Control (SRAM) LBS# Lower Byte Control (SRAM Connection 1. A =Most significant address MS ©2001 Silicon Storage Technology, Inc. Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 6 NC BES A14 A10 4 A15 OE A12 LBS# ...

Page 7

... Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 Data Sheet TABLE PERATION ODES ELECTION 1 Mode BES# BEF# Not Allowed Flash Read Program Erase SRAM Read Write ...

Page 8

... Extended -20°C to +85° ONDITIONS OF EST Input Rise/Fall Time . . . . . . . . . . . . . . 5 ns Output Load . . . . . . . . . . . . . . . . . . . . C See Figures 16 and 17 ©2001 Silicon Storage Technology, Inc. Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 S EQUENCE 2nd Bus 3rd Bus Write Cycle Write Cycle Addr ...

Page 9

... Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 Data Sheet TABLE PERATING HARACTERISTICS Symbol Parameter I Power Supply Current DD Read Flash SRAM Concurrent Operation Write Flash SRAM I Standby V Current 3. 3.3V I Input Leakage Current LI I Output Leakage Current LO V Input Low Voltage ...

Page 10

... Output Disable from WE# Low ODWS T Output Enable from WE# High OEWS T Data Set-up Time DSS T Data Hold from Write Time DHS ©2001 Silicon Storage Technology, Inc. Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 P IMING ARAMETERS SST32HF802/162/164-70 SST32HF802/162/164-90 Min ...

Page 11

... Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 Data Sheet TABLE 11 LASH EAD YCLE Symbol Parameter T Read Cycle Time RC T Bank Enable Access Time BE T Address Access Time AA T Output Enable Access Time BEF# Low to Active Output BLZ ...

Page 12

... Because DIN signals may be in the output state at this time, input signals of reverse polarity must not be applied. FIGURE 4: SRAM W C RITE YCLE ©2001 Silicon Storage Technology, Inc. Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 T RCS T AAS T BES T BLZS T OES T OLZS ...

Page 13

... Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 Data Sheet ADDRESSES A MSS-0 WE# BES# UBS#, LBS# DQ 15-8, DQ 7-0 Notes OE# is High during the Write cycle, the outputs will remain at high impedance. 2. Because DIN signals may be in the output state at this time, input signals of reverse polarity must not be applied. ...

Page 14

... XXAA SW0 A MSF = Most Significant Flash Address X can FIGURE 7: F WE# C LASH ONTROLLED ©2001 Silicon Storage Technology, Inc. Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 OLZ T BLZ DATA VALID T D IMING IAGRAM INTERNAL PROGRAM OPERATION STARTS ...

Page 15

... Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 Data Sheet 5555 ADDRESSES A MSF BEF OE# WE# DQ 15-0 XXAA SW0 A MSF = Most Significant Flash Address X can FIGURE 8: BEF# C ONTROLLED ADDRESSES A MSF-0 BEF# OE# WE MSF = Most Significant Flash Address FIGURE 9: F ...

Page 16

... Table 12) A MSF = Most Significant Flash Address X can but no other value FIGURE 11: WE# C ONTROLLED ©2001 Silicon Storage Technology, Inc. Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 OEH T D IMING ...

Page 17

... Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 Data Sheet 5555 ADDRESSES A MSF-0 BEF# OE WE# DQ 15-0 XXAA SW0 FIGURE 12: WE# C ONTROLLED 5555 ADDRESSES A MSF-0 BEF# OE WE# D 15-0 XXAA SW0 Note: The device also supports BEF# controlled Block-Erase operation. The WE# and BEF# signals are interchangeable as long as minimum timings are met ...

Page 18

... OE WE# SW0 Note: X can but no other value. FIGURE 15 OFTWARE XIT AND ©2001 Silicon Storage Technology, Inc. Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 5555 0000 T IDA T WPH T AA XX55 XX90 00BF SW1 SW2 MFG ID ...

Page 19

... Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 Data Sheet V IHT INPUT V ILT AC test inputs are driven at V (0.9 V IHT for inputs and outputs are V (0 FIGURE 16 NPUT UTPUT TO DUT FIGURE 17 EST OAD XAMPLE ©2001 Silicon Storage Technology, Inc. ...

Page 20

... FIGURE 18 ORD ROGRAM ©2001 Silicon Storage Technology, Inc. Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 Start Write data: XXAAH Address: 5555H Write data: XX55H Address: 2AAAH Write data: XXA0H Address: 5555H Write Word Address/Word Data Wait for end of ...

Page 21

... Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 Data Sheet Internal Timer Program/Erase Initiated Wait SCE Program/Erase Completed FIGURE 19 AIT PTIONS ©2001 Silicon Storage Technology, Inc. Toggle Bit Program/Erase Initiated Read word No Read same word No Does DQ 6 match? ...

Page 22

... Wait T IDA Read Software ID FIGURE 20 OFTWARE RODUCT ©2001 Silicon Storage Technology, Inc. Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 Software Product ID Exit & Reset Command Sequence Write data: XXAAH Address: 5555H Write data: XX55H Address: 2AAAH Write data: XXF0H ...

Page 23

... Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 Data Sheet Chip-Erase Command Sequence Load data: XXAAH Address: 5555H Load data: XX55H Address: 2AAAH Load data: XX80H Address: 5555H Load data: XXAAH Address: 5555H Load data: XX55H Address: 2AAAH Load data: XX10H ...

Page 24

... Wait for End of Write Indication FIGURE 22 ONCURRENT PERATION ©2001 Silicon Storage Technology, Inc. Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 Concurrent Operation Load SDP Command Sequence Flash Program/Erase Initiated Read or Write SRAM End Wait Flash Operation Completed End Concurrent ...

Page 25

... SST32HF162-70-4C-TBK SST32HF162-70-4E-EK SST32HF162-70-4E-TBK Valid combinations for SST32HF164 SST32HF164-70-4C-EK SST32HF164-70-4C-TBK SST32HF164-90-4C-EK SST32HF164-90-4C-TBK SST32HF164-70-4E-EK SST32HF164-70-4E-TBK SST32HF164-90-4E-EK SST32HF164-90-4E-TBK Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. ...

Page 26

... Maximum allowable mold flash is 0.15mm at the package ends, and 0.25mm between leads. 48 LEAD HIN MALL UTLINE SST ACKAGE ODE ©2001 Silicon Storage Technology, Inc. Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 18.50 18.30 20.20 19.80 Scale is 1:5 mm. (TSOP ACKAGE Data Sheet 1.05 0.95 .50 BSC ...

Page 27

... Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 Data Sheet TOP VIEW CORNER SIDE VIEW SEATING PLANE Note: 1. Although many dimensions are similar to those of JEDEC Publication 95, MO-210, this specific package is not registered. 2. All linear dimensions are in millimeters (min/max). ...

Page 28

... Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036 ©2001 Silicon Storage Technology, Inc. Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 www.SuperFlash.com or www.ssti.com 28 Data Sheet S71171-05-000 8/01 520 ...

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