PA1001 RLS, PA1001 Datasheet
PA1001
Manufacturer Part Number
PA1001
Description
Manufacturer
RLS
Datasheet
1.PA1001.pdf
(1 pages)
FEATURES
·
·
·
·
·
DESCRIPTION
The photosensor is made of 6-chip photodiode
array.
technology and
Silicon-nitride is acting as antireflective layer.
Photodiodes are bonded to the PCB and protected
with transparent epoxy glue. The photodiode can
work in photovoltaic or photoconductive mode.
TEMPERATURE CONDITIONS
PHOTODIODE CHARACTERICTICS
Note 1: CURRENT (I
RLS merilna tehnika d.o.o., C. II. grupe odredov 25
1261 Ljubljana-Dobrunje, Slovenija
FD 2309
DIODE
TYPE
Reflow soldering
High responsetivity
Low capacitance
Suitable for SMT
High reliability
Peak wavelength at 830 nm
Operating
Storage
Photodiodes
CHIP SIZE
2.3 x 0.9
(mm)
DIMENSIONS
SC
passivated with silicon-nitride.
) is measured under 100 mW/cm
are
ACTIVE
AREA
(mm
1.46
produced
2
)
-35 °C..+125 °C
-20 °C..+80 °C
CURRENT
encoder products
220 °C, 60s
V
DARK
r
TYP
(nA)
= -5V
<1
photosensors
ELECTRICAL PARAMETERS
in
I
planar
r
> -50mA
K5
A5
K6
A3
A4
K4
MIN
BV
(V)
50
2
0.80
2.00
3.20
4.00
AM spectrum.
4
5
Dimensions
V
CAPACITANCE
r
TYP
(pF)
22
= 0V
Tel.: +386 1 5272100
Fax: +386 1 5272129
6
7.00
3
V
r
TYP
(pF)
= -5V
10
1
2
Photodiode Arrays
0.7
0.6
0.3
0.5
0.4
0.2
400
PEAK
K2
A6
A2
A1
K1
K3
(nm)
TYP
830
I
500
OPTICAL PARAMETERS
wavelength [nm]
RESPONSE CURRENT
E-mail: mail@rls.si
Internet: http://www.rls.si
600
(A/W)
TYP
0.67
700
A1
A2
A3
A4
A5
A6
Schematic
800
D1
D2
D3
D4
D5
D6
TYP
(mA)
520
900 1000
I
sc
K1
K2
K3
K4
K5
K6
1
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