HMC283 Hittite Microwave Corporation, HMC283 Datasheet

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HMC283

Manufacturer Part Number
HMC283
Description
Manufacturer
Hittite Microwave Corporation
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HMC283LM1
Manufacturer:
ADI/亚德诺
Quantity:
20 000
3 - 2
3
Typical Applications
The HMC283 is ideal for:
• Millimeterwave Point-to-Point Radios
• VSAT
• SATCOM
Functional Diagram
Electrical Specifi cations,
Parameter
Frequency Range
Gain
Gain Flatness (Any 1 GHz BW)
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Idd)(Vdd = +3.5V, Vgg = -0.15V Typ.)
*Vdd = Vdd1, 2, 3, 4 connected to +3.5V, adjusting Vgg = Vgg1, 2, 3, 4 between -2.0 to +0.4V to achieve Idd = 300 mA typical.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
T
A
v03.1007
= +25° C, Vdd= +3.5V*, ldd = 300 mA
Order On-line at www.hittite.com
Features
High Gain: 21 dB
Psat Output Power: +21 dBm
Wideband Performance: 17 - 40 GHz
Small Chip Size: 1.72 x 0.88 x 0.1 mm
General Description
The HMC283 chip is a four stage GaAs MMIC Medium
Power Amplifi er (MPA) which covers the frequency
range of 17 to 40 GHz. The chip can easily be inte-
grated into Multi-Chip Modules (MCMs) due to its
small size. The chip utilizes a GaAs PHEMT process
offering 21 dB gain and +21 dBm output power from a
bias supply of +3.5V @ 300 mA. The HMC283 may
be used as a frequency doubler. A B.I.T. (Built-In-Test)
pad (Vdet) allows monitoring microwave output power.
All data is with the chip in a 50 ohm test fi xture con-
nected via 0.076 x 0.0127mm (3mil x 0.5mil) ribbon
bonds of minimal length 0.31mm (<12mils).
GaAs MMIC MEDIUM POWER
Min.
16
40
14
17
21
AMPLIFIER, 17 - 40 GHz
17 - 40
±0.8
Typ.
300
21
50
18
21
26
10
9
6
HMC283
Max.
400
14
Units
GHz
dBm
dBm
dBm
mA
dB
dB
dB
dB
dB
dB

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HMC283 Summary of contents

Page 1

... Multi-Chip Modules (MCMs) due to its small size. The chip utilizes a GaAs PHEMT process offering 21 dB gain and +21 dBm output power from a bias supply of +3.5V @ 300 mA. The HMC283 may be used as a frequency doubler. A B.I.T. (Built-In-Test) pad (Vdet) allows monitoring microwave output power. ...

Page 2

... Input Return Loss vs. Temperature -12 -16 - Output Return Loss vs. Temperature -12 -16 - Order On-line at www.hittite.com HMC283 +25C -55C +85C FREQUENCY (GHz) +25C -55C +85C FREQUENCY (GHz) +25 C - ...

Page 3

... Power Compression @ 39 GHz 24 Frequency (GHz 25.4 28 25.9 27.1 14 24.4 25 Order On-line at www.hittite.com HMC283 GaAs MMIC MEDIUM POWER AMPLIFIER GHz 8 + - INPUT POWER (dBm - -10 ...

Page 4

... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS [1] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. Order On-line at www.hittite.com HMC283 ...

Page 5

... Vgg4) to acheive Idd = 300mA. External bypass caps of 100pF and 0.1 μF are required. Gate Control for amplifi er. Adjust Vgg ( = Vgg1, Vgg2, Vgg3, Vgg4) to acheive Idd = 300mA. External bypass caps of 100pF and 0.1 μF are required. Order On-line at www.hittite.com HMC283 GaAs MMIC MEDIUM POWER AMPLIFIER GHz Interface Schematic ...

Page 6

... RF bypass capacitors should be used on the Vdd & Vgg inputs. 100pF single layer capacitors (mounted eutectically or by conductive epoxy) placed no further than 0.762 mm (30 mils) from the chip are recommended. The photo in fi gure 3 shows a typical assembly for the HMC283 MMIC chip. Figure 3: Typical HMC283 Assembly Handling Precautions Follow these precautions to avoid permanent damage ...

Page 7

... All bonds should be as short as possible <0.31mm (12 mils). HMC283 Alternate Applications: HMC283 Frequency Multiplier Performance HMC283 can also perform as a frequency multiplier. This is accomplished by biasing Vgg1 into its pinchoff region – typically -1V to -2V. By adjusting the Vg1 bias, the device will operate as a doubler or tripler ...

Page 8

... Notes: For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 GaAs MMIC MEDIUM POWER AMPLIFIER GHz Order On-line at www.hittite.com HMC283 ...

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