F1001 Polyfet RF Devices, F1001 Datasheet
F1001
Manufacturer Part Number
F1001
Description
Manufacturer
Polyfet RF Devices
Datasheet
1.F1001.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
F10016DC
Manufacturer:
SAMSUNG
Quantity:
6 261
gold metal for greatly extended
lifetime. Low output capacitance
and high F enhance broadband
performance
General Description
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier
Base Stations, Broadcast FM/AM,
MRI, Laser Driver and others.
SYMBOL
SYMBOL
VSWR
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Gps
Ciss
Crss
Coss
Total
Device
Dissipation
50 Watts
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
Silicon VDMOS and LDMOS
"Polyfet"
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
PARAMETER
PARAMETER
Drain Breakdown Voltage
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Forward Transconductance
Saturation Resistance
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
t
Common Source Output Capacitance
TM
Junction to
Case Thermal
Resistance
polyfet rf devices
process features
3.13
o
C/W
Maximum
Junction
Temperature
RF CHARACTERISTICS (
200
ELECTRICAL CHARACTERISTICS (EACH SIDE)
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
o
C
-65
Storage
Temperature
MIN
MIN
POLYFET RF DEVICES
o
16
C
1
65
to 150
TYP
TYP
o
0.8
5.5
33
20
C
60
1
4
20
DC Drain
Current
MAX
MAX
20:1
1
1
7
WATTS OUTPUT )
2 A
SILICON GATE ENHANCEMENT MODE
Relative
UNITS
UNITS
Ohm
Amp
Mho
dB
%
mA
RF POWER
uA
pF
pF
pF
V
V
HIGH EFFICIENCY, LINEAR,
PATENTED GOLD METALIZED
HIGH GAIN, LOW NOISE
Drain to
Gate
Voltage
Idq =
Idq =
Idq =
20 Watts Single Ended
70
TEST CONDITIONS
TEST CONDITIONS
o
Package Style AA
Ids =
Ids =
Vds =
Vds = 0 V,
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids = 4
Vgs = 20V, Vds = 10V
Vds =
Vds =
Vds =
V
0.2
0.2
0.2
A,
A,
A,
0.05
28.0
28.0
0.1
28.0
28.0
VDMOS TRANSISTOR
Vds =
Vds =
Vds =
A,
A,
V,
V, Vgs = 0V, F = 1 MHz
V, Vgs = 0V, F = 1 MHz
V, Vgs = 0V, F = 1 MHz
Drain to
Source
Voltage
70
REVISION
Vgs = 0V
Vgs = 0V
Vgs = 30V
Vgs = Vds
V
28.0
28.0
28.0
A
V,
V,
V,
F1001
F = 175 MHz
F = 175 MHz
F = 175 MHz
Gate to
Source
Voltage
8/1/97
30V
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F1001 Summary of contents
Page 1
... Vgs = Vds V Mho Vds = 10V, Vgs = 5V Ohm Vgs = 20V, Ids = 4 Amp Vgs = 20V, Vds = 10V pF Vds = 28.0 V, Vgs = 0V MHz pF Vds = 28.0 V, Vgs = 0V MHz pF Vds = 28.0 V, Vgs = 0V MHz REVISION F1001 Gate to Source Voltage 30V 175 MHz 175 MHz 175 MHz A 8/1/97 ...
Page 2
... POUT VS PIN GRAPH F1001 POUT vs PIN IDQ=0.1A; F=175 MHZ VDS=28V Efficiency = 75 0.2 0.4 0.6 0.8 1 1.2 1.4 PIN IN WATTS POUT GAIN IV CURVE F1B 1DIE IV CURVE Vds in Volts S11 AND S22 SMITH CHART 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet ...