CEPF630 Chino-Excel Technology Co., Ltd., CEPF630 Datasheet

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CEPF630

Manufacturer Part Number
CEPF630
Description
Manufacturer
Chino-Excel Technology Co., Ltd.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CEPF630
Manufacturer:
CET
Quantity:
2 895
FEATURES
ABSOLUTE MAXIMUM RATINGS
Details are subject to change without notice .
N-Channel Enhancement Mode Field Effect Transistor
CEPF630
CEBF630
CEFF630
Lead free product is acquired.
Super high dense cell design for extremely low R
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation @ T
Operating and Store Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
High power and current handing capability.
CEB SERIES
TO-263(DD-PAK)
Type
200V
200V
200V
V
DSS
Parameter
Parameter
a
- Derate above 25 C
R
0.35Ω
0.35Ω
0.35Ω
DS(ON)
C
CEP SERIES
TO-220
= 25 C
10A
10A
10A
I
D
d
@V
DS(ON)
10V
10V
10V
T c = 25 C unless otherwise noted
GS
CEPF630/CEBF630
.
1
Symbol
Symbol
T
I
R
CEF SERIES
TO-220F
R
V
V
J
DM
P
I
,T
DS
GS
θJC
θJA
D
D
stg
e
TO-220/263
G
62.5
0.6
1.5
10
40
75
-55 to 150
Limit
Limit
±2
200
CEFF630
0
TO-220F
http://www.cetsemi.com
0.27
3.7
10
40
65
33
D
Rev 2.
S
d
d
2007.March
Units
Units
W/ C
C/W
C/W
W
V
V
A
A
C

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CEPF630 Summary of contents

Page 1

... Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ T - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Details are subject to change without notice . CEPF630/CEBF630 10A 10V 10A 10V 10A d 10V ...

Page 2

... Test : Pulse Width < 300µs, Duty Cycle < c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package I = 6.4A . S(max) g.Full package V test condition CEPF630/CEBF630 unless otherwise noted Symbol Test Condition 0V 250 µ A DSS ...

Page 3

... Drain-to-Source Voltage (V) DS Figure 3. Capacitance 1 =250µA 1.2 D 1.1 1.0 0.9 0.8 0.7 0.6 -50 - 100 T , Junction Temperature Figure 5. Gate Threshold Variation with Temperature CEPF630/CEBF630 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100 125 150 Figure 6. Body Diode Forward Voltage 4 - 192 CEFF630 25 C -55 C ...

Page 4

... GEN G S Figure 9. Switching Test Circuit 0 10 D=0.5 0.2 -1 0.1 10 0.05 0.02 0.01 Single Pulse - Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve CEPF630/CEBF630 DS(ON = =150 C J Single Pulse d(on) 90% ...

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