AP4953M ETC-unknow, AP4953M Datasheet
AP4953M
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AP4953M Summary of contents
Page 1
... J Thermal Data Symbol Rthj-amb Thermal Resistance Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S1 Parameter Parameter 3 AP4953M BV -30V DSS R 53mΩ DS(ON Rating Units - 30 ± 0.016 W/℃ ...
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... AP4953M Electrical Characteristics@T Symbol BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... T = Fig 2. Typical Output Characteristics 1 =25 ℃ ℃ ℃ ℃ 1.6 V 1.4 1.2 1.0 0.8 0.6 - Fig 4. Normalized On-Resistance AP4953M Drain-to-Source Voltage (V) DS =5A D =10V 100 Junction Temperature ( C) j v.s. Junction Temperature -10V -8.0V -6.0V =-4.0V o =150 ...
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... AP4953M Case Temperature ( c Fig 5. Maximum Drain Current v.s. Case Temperature 100 Single Pulse 0.01 0 (V) DS Fig 7. Maximum Safe Operating Area 100 125 150 o C) 1ms 0.1 10ms 100ms 1s 0.01 10s DC 0.001 10 100 Fig 8. Effective Transient Thermal Impedance 3 2 ...
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... Fig 11. Forward Characteristic of Reverse Diode 10000 1000 100 Fig 10. Typical Capacitance Characteristics = 1.1 1.3 1 ( Junction Temperature ( j Fig 12. Gate Threshold Voltage v.s. Junction Temperature AP4953M f=1.0MHz Ciss Coss Crss 100 150 o C) ...
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... AP4953M -10 V Fig 13. Switching Time Circuit Fig 15. Gate Charge Circuit THE DS OSCILLOSCOPE 0.5 x RATED THE OSCILLOSCOPE -10V 0.5 x RATED d(off) d(on) r Fig 14. Switching Time Waveform ...