GM71C4263CJ-60 Hynix Semiconductor, GM71C4263CJ-60 Datasheet

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GM71C4263CJ-60

Manufacturer Part Number
GM71C4263CJ-60
Description
DRAM Chip, EDO DRAM, 512KByte, 5V Supply, Commercial, SOJ, 40-Pin
Manufacturer
Hynix Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
GM71C4263CJ-60
Manufacturer:
LGS
Quantity:
20 000
Description
generation dynamic RAM organized 262,144 x
16 bit. GM71C(S)4263C/CL has realized higher
density,
functions by utilizing advanced CMOS process
technology.
Extended Data Out(EDO) Mode as a high speed
access mode. Multiplexed address inputs permit
the GM71C(S)4263C/CL to be packaged in
standard 400 mil 40 pin plastic SOJ.
package size provides high system bit densities
and
automated testing and insertion equipment.
System oriented features include single power
supply of 5V+/-10% tolerance, direct interfacing
capability with high performance logic families
such as Schottky TTL.
Pin Configuration
The GM71C(S)4263C/CL is the new
is
LG Semicon Co.,Ltd.
higher
compatible
The GM71C(S)4263C/CL offers
performance
with
widely
and
available
RAS
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
V
V
WE
V
NC
NC
NC
various
A0
A1
A2
A3
CC
CC
CC
The
10
11
12
13
14
15
16
17
18
19
20
1
2
3
4
5
6
7
8
9
(Top View)
40 SOJ
Features
* 262,144 Words x 16 Bit Organization
* Extended Data Out (EDO) Mode Capability
* Single Power Supply (5V+/-10%)
* Fast Access Time & Cycle Time
* Low Power
* RAS Only Refresh, CAS before RAS Refresh,
* All inputs and outputs TTL Compatible
* 512 Refresh Cycles/8 §Â
* 512 Refresh Cycles/128 §Â (L-version)
* Battery Back Up Operation (L-version)
* 2 CAS byte Control
* Self-Refresh Operation (L-version)
Active : 715/660/605 mW(MAX)
Standby : 5.5mW (CMOS level : MAX)
Hidden Refresh Capability
GM71C(S)4263C/CL-60
GM71C(S)4263C/CL-70
GM71C(S)4263C/CL-80
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
V
I/O15
I/O14
I/O13
I/O12
V
I/O11
I/O10
I/O9
I/O8
NC
LCAS
UCAS
OE
A8
A7
A6
A5
A4
V
1.1mW (L-version)
SS
SS
SS
262,144 WORDS x 16 BIT
CMOS DYNAMIC RAM
GM71CS4263CL
GM71C4263C
t
60
70
80
RAC
t
CAC
17
20
20
124
144
104
t
(Unit: ns)
RC
t
25
HPC
30
35
1

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GM71C4263CJ-60 Summary of contents

Page 1

LG Semicon Co.,Ltd. Description The GM71C(S)4263C/CL is the new generation dynamic RAM organized 262,144 x 16 bit. GM71C(S)4263C/CL has realized higher density, higher performance functions by utilizing advanced CMOS process technology. The GM71C(S)4263C/CL offers Extended Data Out(EDO) Mode as a ...

Page 2

... LG Semicon Pin Description Pin A0-A8 Address Inputs A0-A8 Refresh Address Inputs I/O0-I/O15 Data Input / Data Output RAS Row Address Strobe Column Address Strobe UCAS, LCAS Ordering Information Type No. GM71C4263CJ-60 GM71C4263CJ-70 GM71C4263CJ-80 GM71CS4263CLJ-60 GM71CS4263CLJ-70 GM71CS4263CLJ-80 2 Function Pin Access Time 60ns 70§À ...

Page 3

LG Semicon Absolute Maximum Ratings* Symbol T Ambient Temperature under Bias A T Storage Temperature (Plastic) STG V /V Voltage on any Pin Relative OUT V Voltage Short Circuit Output Current OUT P ...

Page 4

LG Semicon DC Electrical Characteristics (V Symbol Output Level V OH Output "H" Level Voltage (I V Output Level OL Output "L" Level Voltage (I I Operating Current CC1 Average Power Supply Operating Current (RAS, LCAS or UCAS Cycling: t ...

Page 5

LG Semicon Capacitance (V = 5V+/-10 Symbol C Input Capacitance (Address Input Capacitance (Clocks Output Capacitance (Data-In/Out) I/O Note: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method ...

Page 6

LG Semicon Read Cycle Symbol Parameter t Access Time from RAS RAC t Access Time from CAS CAC t Access Time from Address AA t Access Time from OE OAC t Read Command Setup Time RCS t Read Command Hold ...

Page 7

LG Semicon Read- Modify-Write Cycle Symbol Parameter t Read-Modify-Write Cycle Time RWC t RAS to WE Delay Time RWD t CAS to WE Delay Time CWD t Column Address to WE Delay Time AWD t OE Hold Time from WE ...

Page 8

LG Semicon Self-Refresh Mode Symbol Parameter t RAS Pulse Width (Self-Refresh) RASS t RAS Precharge Time (Self-Refresh) RPS t CAS Hold Time (Self-Refresh) CHS Notes Measurements assume t 2. Assumes that t <=t (max) and t RCD RCD ...

Page 9

LG Semicon 15. In delayed write or read-modify-write cycles, OE must disable output buffer prior to applying data to the device. After RAS is reset impedance ); if t > t OEH CWL Either must ...

Page 10

LG Semicon Notes concerning 2CAS control Please do not separate the UCAS/LCAS operation timing intentionally. However skew between UCAS/LCAS are allowed under the following conditions. 1) Each of the UCAS/LCAS should satisfy the timing specifications individually. 2) Different operation mode ...

Page 11

LG Semicon Timing Waveforms RAS t T UCAS LCAS t ASR ADDRESS ROW High-Z D OUT RAS t CSH t t RCD RSH t CAS t t RAD RAL t CAL t t ...

Page 12

LG Semicon RAS t T UCAS LCAS t ASR ADDRESS ROW OUT RAS RCD CAS t CSH RAH ASC CAH COLUMN t t WCS WCH t ...

Page 13

LG Semicon RAS t T UCAS LCAS t ASR ADDRESS ROW OUT FIGURE 3. DELAYED WRITE CYCLE *Note : In delayed write or read-modify-write cycles, OE must disable output buffer prior to applying data to ...

Page 14

LG Semicon RAS t T UCAS LCAS t t ASR ADDRESS ROW OUT FIGURE 4. READ MODIFY WRITE CYCLE *Note : In delayed write or read-modify-write cycles, OE must disable output buffer prior to applying ...

Page 15

LG Semicon RAS CRP UCAS LCAS t ASR ADDRESS ROW t OFR t OFF INVALID D OUT D OUT FIGURE 5. RAS ONLY REFRESH CYCLE RAS t RPC t RAH High-Z GM71C4263C GM71CS4263CL t ...

Page 16

LG Semicon t RP RAS t RPC t CP UCAS LCAS ADDRESS t OFR t OFF INVALID D OUT D OUT FIGURE 6. CAS BEFORE RAS REFRESH CYCLE RAS RPC t ...

Page 17

LG Semicon RAS UCAS LCAS t RAD t t ASR RAH t ADDRESS ROW High-Z D OUT FIGURE 7. HIDDEN REFRESH CYCLE RAS RP RAS t RCD ...

Page 18

LG Semicon RAS RCD UCAS LCAS t RAD ASR RAH ADDRESS ROW COLUMN 1 t RCS WE OE High-Z D OUT INVALID D FIGURE 8. EXTENDED DATA OUT MODE READ CYCLE 18 t ...

Page 19

LG Semicon RAS CSH t CAS UCAS LCAS t RCHR t RCS WE t ASC t CAH t t ASR RAH ROW ADDRESS COLUMN 1 t CAL t DZC High DZO OE High-Z D ...

Page 20

LG Semicon RAS t T LCAS UCAS t ASR t t RAH ASC COLUMN ADDRESS ROW t DZC t RCS DZO OE t RAC High - Z LD OUT High - Z UD OUT FIGURE 10. ...

Page 21

LG Semicon RAS t T UCAS t LCAS ASR t RAH ADDRESS ROW OUT FIGURE 11. EXTENDED DATA OUT MODE EARLY WRITE CYCLE t RASP t t CSH HPC RCD CAS CP t ...

Page 22

LG Semicon RAS RCD UCAS LCAS t RAD t t ASR ASC t RAH ADDRESS ROW t RCS WE t DZC DZO OE D OUT INVALID D FIGURE 12. EXTENDED DATA OUT MODE DELAYED ...

Page 23

LG Semicon RAS RCD UCAS t LCAS RAD t ASR t RAH COLUMN ROW ADDRESS t RCS WE t DZC DZO OE t RAC D OUT INVALID D FIGURE 13. EXTENDED DATA OUT MODE ...

Page 24

LG Semicon RAS RCD UCAS LCAS t CSH t WCS WE t RAH t ASR COLUMN ROW ADDRESS High - Z D OUT FIGURE 14. EXTENDED DATA OUT MODE MIX CYCLE ...

Page 25

LG Semicon RAS RCD t CSH UCAS LCAS t RCHR t RCS WE t RAH t ASR COLUMN ROW ADDRESS High - RAC D OUT FIGURE 15. EXTENDED DATA OUT MODE MIX ...

Page 26

LG Semicon t RP RAS t RPC t CP UCAS LCAS t t OFF INVALID D OUT D OUT The low self refresh current is achieved by introducing extremely long internal refresh cycle. Therefore some care needs to be taken ...

Page 27

LG Semicon Package Dimension 40 SOJ 1.010(25.67) MIN 1.021(25.93) MAX 0.050(1.27) TYP 0.015(0.38) MIN 0.020(0.50) MAX 0.128(3.25) MIN 0.148(3.75) MAX 0.026(0.66) MIN 0.032(0.81) MAX GM71C4263C GM71CS4263CL Unit: Inches (mm) 0.025(0.64) MIN 0.083(2.10) MIN 27 ...

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