AD8008 Analog Devices, AD8008 Datasheet - Page 6

• Manufacturer Part Number: AD8008
• Description: Ultralow Distortion, High Speed Amplifiers
• Manufacturer: Analog Devices

Specifications of AD8008

• -3db Bandwidth: 650MHz
• Slew Rate: 1kV/µs
• Vos: 500µV
• Ib: 4µA
• # Opamps Per Pkg: 2
• Input Noise (nv/rthz): 2.7nV/rtHz
• Vcc-vee: 5V to 12V
• Isy Per Amplifier: 10.2mA
• Packages: SOIC,SOP

AD8007/AD8008
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Supply Voltage
Power Dissipation
Common-Mode Input Voltage
Differential Input Voltage
Output Short-Circuit Duration
Storage Temperature Range
Operating Temperature Range
Lead Temperature (Soldering, 10 sec)
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation in the AD8007/AD8008
packages is limited by the associated rise in junction temperature
(T
the junction temperature. At approximately 150°C, which is the
glass transition temperature, the plastic changes its properties.
Even temporarily exceeding this temperature limit can change
the stresses that the package exerts on the die, permanently
shifting the parametric performance of the AD8007/AD8008.
Exceeding a junction temperature of 175°C for an extended
time can result in changes in the silicon devices, potentially
causing failure.
The still-air thermal properties of the package and PCB (θ
ambient temperature (T
package (P
The junction temperature can be calculated as
The power dissipated in the package (P
quiescent power dissipation and the power dissipated in the
package due to the load drive for all outputs. The quiescent
power is the voltage between the supply pins (V
quiescent current (I
midsupply, the total drive power is V
dissipated in the package and some in the load (V
The difference between the total drive power and the load
power is the drive power dissipated in the package.
J
) on the die. The plastic encapsulating the die locally reaches
T
P
P
J
D
D
= T
= Quiescent Power + (Total Drive Power − Load Power)
=
(
D
A
V
) determine the junction temperature of the die.
+ (P
S
×
D
I
S
× θ
)
S
+
). Assuming the load (R
JA
⎛
⎜
⎜
⎝
)
V
A
2
), and the total power dissipated in the
S
×
V
R
OUT
L
⎞
⎟
⎟
⎠
−
S
/2 × I
V
D
) is the sum of the
OUT
R
L
OUT
2
L
) is referenced to
, some of which is
Rating
12.6 V
See Figure 5
±V
±1.0 V
See Figure 5
−65°C to +125°C
−40°C to +85°C
300°C
S
) times the
OUT
S
× I
OUT
JA
).
),
Rev. E | Page 6 of 20
RMS output voltages should be considered. If R
V
V
If the rms signal levels are indeterminate, then consider the
worst case, when V
In single-supply operation, with R
V
Airflow increases heat dissipation, effectively reducing θ
addition, more metal directly in contact with the package leads
from metal traces, through-holes, ground, and power planes
reduces the θ
capacitances at the input leads of high speed op amps, see the
Layout Considerations section.
Figure 5 shows the maximum safe power dissipation in the
package vs. the ambient temperature for the SOIC-8 (125°C/W),
MSOP-8 (150°C/W), and SC70-5 (210°C/W) packages on a
JEDEC standard 4-layer board. θ
OUTPUT SHORT CIRCUIT
Shorting the output to ground or drawing excessive current for
the AD8007/AD8008 will likely cause catastrophic failure.
ESD CAUTION
Figure 5. Maximum Power Dissipation vs. Temperature for a 4-Layer Board
S
S
OUT
, as in single-supply operation, then the total drive power is
× I
P
= V
OUT
2.0
1.5
1.0
0.5
D
0
–
=
6
.
S
0
/2.
MSOP-8
(
V
S
JA
–40
×
. Care must be taken to minimize parasitic
I
S
SC70-5
)
OUT
+
–20
AMBIENT TEMPERATURE (°C)
⎛
⎜
⎝
= V
V
R
4
S
L
⎞
⎟
⎠
0
S
/4 for R
2
SOIC-8
20
L
JA
referenced to V
values are approximations.
L
to midsupply
40
60
L
S
is referenced to
, worst case is
80
1
JA
0
0
. In