AD8010 Analog Devices, AD8010 Datasheet - Page 3

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AD8010

Manufacturer Part Number
AD8010
Description
Low Power, High Current Distribution Amplifier
Manufacturer
Analog Devices
Datasheet

Specifications of AD8010

-3db Bandwidth
230MHz
Slew Rate
800V/µs
Vos
5mV
Ib
6µA
# Opamps Per Pkg
1
Input Noise (nv/rthz)
2nV/rtHz
Vcc-vee
9V to 12V
Isy Per Amplifier
17mA
Packages
DIP,SOIC

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ABSOLUTE MAXIMUM RATINGS
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Internal Power Dissipation
Input Voltage (Common-Mode) . . . . . . . . . . . . . . . . . . . ± V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . ± 1.2 V
Output Short Circuit Duration
Storage Temperature Range N, R . . . . . . . . –65°C to +125°C
Operating Temperature Range (A Grade) . . –40°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . 300°C
NOTES
1
2
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8010 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
Model
AD8010AN
AD8010AR
AD8010AR-16
AD8010AR-REEL
AD8010AR-REEL7
AD8010AR-16-REEL
AD8010AR-16-REEL7
Stresses above those listed under Absolute Maximum Ratings may cause perma-
Specification is for device in free air:
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
8-Lead Plastic Package: θ
8-Lead SOIC Package: θ
16-Lead SOIC Package: θ
Plastic Package (N) . . . . . . Observe Power Derating Curves
Small Outline Package (R) . Observe Power Derating Curves
Wide Body SOIC (R-16) . . . Observe Power Derating Curves
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
JA
JA
JA
= 122°C/W
= 90°C/W
= 73°C/W
2
1
Temperature Range
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
3.0
2.5
2.0
1.5
1.0
0.5
0
–50
–40 –30 –20 –10
8-LEAD SOIC PACKAGE
8-LEAD MINI-DIP PACKAGE
ORDERING GUIDE
AMBIENT TEMPERATURE – C
0
S
10
20 30 40
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8010 is limited by the associated rise in junction temperature.
The maximum safe junction temperature for plastic encapsu-
lated devices is determined by the glass transition temperature
of the plastic, approximately +150°C. Temporarily exceeding
this limit may cause a shift in parametric performance due to a
change in the stresses exerted on the die by the package. Exceed-
ing a junction temperature of +175°C for an extended period
can result in device failure.
While the AD8010 is internally short circuit protected, this
may not be sufficient to guarantee that the maximum junction
temperature (+150°C) is not exceeded under all conditions. To
ensure proper operation, it is necessary to observe the maximum
power derating curves.
16-LEAD SOIC
PACKAGE (WIDEBODY)
Package Description
8-Lead Plastic DIP
8-Lead Plastic SOIC
16-Lead Wide Body SOIC
REEL SOIC
REEL SOIC
REEL SOIC
REEL SOIC
50 60 70 80 90
T
J
= 150 C
WARNING!
ESD SENSITIVE DEVICE
Package Options
N-8
SO-8
R-16
13" REEL
7" REEL
13" REEL
7" REEL
AD8010

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