IRS20954STRPBF International Rectifier, IRS20954STRPBF Datasheet - Page 15

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IRS20954STRPBF

Manufacturer Part Number
IRS20954STRPBF
Description
IC DVR DGTL AUDIO PROT 16-SOIC
Manufacturer
International Rectifier
Type
MOSFET Driverr
Datasheet

Specifications of IRS20954STRPBF

Applications
Amplifiers, Receivers
Mounting Type
Surface Mount
Package / Case
16-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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OCP Design Example
Fig. 14 demonstrates the typical peripheral circuit of high-side current sensing. For example, the over-current protection level is
set to trip at 30 A with a MOSFET with R
Choose R2+R3=10 kΩ, thus
Vth
V
V
D1. T
R2 = 6.8 k Ω
R3 = 3.3 k Ω
The reverse blocking diode D1 is determined by voltage rating and speed. To block bus voltage, reverse voltage has to be
higher than (+B)-(-B). Also the reverse recovery time needs to be as fast as the bootstrap charging diode. The Philips BAV21W,
200 V, 50 ns high speed switching diode, is more than sufficient.
www.irf.com
R
DS
F
3
= 0.6 V
= 10
OCL
is the voltage drop at I
he values of R2 and R3 from the E-12 series are:
= 1.2 V
k
V
Ω
DS@ID=30A
V
Vth
DS
+
OCH
High-side Over-current Setting
V
Choosing the Right Reverse Blocking Diode
Comparator
OC
= 100 mΩ x 30 A = 3 V
F
CSH
D
=30 A across R
R
+
-
1.2V
3
Not recommended for new designs.
Figure 14: Programming High-side Over-Current Threshold
=
IRS20954
10
Please use IRS20957SPBF.
k
Ω
HO
DS(ON)
DS(ON)
R
2
of 100 mΩ, the component values of R2 and R3 are calculated as:
.
of the high-side MOSFET. V
CSH
HO
VB
VS
LO
R3
R2
Vcc
R1
F
D1
is a forward voltage of reverse blocking diode,
Q2
Q1
+B
-B
IRS20954SPBF
OUT
15

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