BTA216B-600E NXP Semiconductors, BTA216B-600E Datasheet - Page 5

Planar passivated high commutation three quadrant triac in a SOT404 plastic package

BTA216B-600E

Manufacturer Part Number
BTA216B-600E
Description
Planar passivated high commutation three quadrant triac in a SOT404 plastic package
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BTA216B-600E
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
April 2002
Three quadrant triacs
guaranteed commutation
Fig.8. Normalised latching current I
Fig.9. Normalised holding current I
2.5
1.5
0.5
2.5
1.5
0.5
I
GT
3
2
1
0
2.5
1.5
0.5
3
2
1
0
-50
-50
3
2
1
0
(T
IL(25 C)
-50
IGT(25° C)
IL(Tj)
IGT(Tj)
IH(25C)
IH(Tj)
j
Fig.7. Normalised gate trigger current
)/ I
GT
versus junction temperature T
versus junction temperature T
(25˚C), versus junction temperature T
0
0
0
Tj/° C
Tj / C
50
Tj / C
50
50
100
100
100
H
L
(T
(T
j
j
)/ I
)/ I
j
j
T2+ G+
T2+ G-
T2- G-
.
.
H
L
(25˚C),
(25˚C),
150
150
150
j
.
4
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
100
10
0.001
50
40
30
20
10
commutating current dI
1
0.01
Fig.12. Mimimum, critical rate of change of
0
20
0.1
10
0
10us
dIcom/dt (A/ms)
IT / A
1
Vo = 1.195 V
Rs = 0.018 Ohms
Tj = 125 C
Zth j-mb (K/W)
Tj = 25 C
temperature, dV
0.5
0.1ms
40
BTA216B series D, E and F
pulse width t
60
1ms
1
unidirectional
tp / s
typ
BT139
Tj/˚C
VT / V
10ms
1.5
80
com
com
/dt = 10V/µs.
/dt versus junction
P
D
bidirectional
Product specification
p
.
0.1s
100
2
max
t
p
2.5
th j-mb
1s
120
F TYPE
E TYPE
D TYPE
t
Rev 2.000
, versus
10s
3
140

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