BTA316B-600E NXP Semiconductors, BTA316B-600E Datasheet - Page 7

• Manufacturer Part Number: BTA316B-600E
• Description: Planar passivated high commutation three quadrant triac in a SOT404 plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 6.
BTA316B-600E
Product data sheet
Symbol
Static characteristics
I
I
I
V
V
I
Dynamic characteristics
dV
dI
t
GT
L
H
D
gt
T
GT
com
D
/dt
/dt
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
rate of rise of off-state
voltage
rate of change of
commutating current
gate-controlled turn-on
time
All information provided in this document is subject to legal disclaimers.
Conditions
V
see
V
see
V
see
V
see
V
see
V
see
V
I
V
see
V
see
V
V
waveform; gate open circuit
V
dV
V
dV
condition; gate open circuit
V
dV
I
dI
T
TM
D
D
D
D
D
D
D
D
D
D
DM
D
D
D
G
= 18 A; T
com
com
com
/dt = 5 A/µs
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; T
= 12 V; I
= 400 V; I
= 600 V; T
= 400 V; T
= 400 V; T
= 400 V; T
= 20 A; V
Rev. 02 — 29 November 2010
Figure 7
Figure 7
Figure 7
Figure 8
Figure 8
Figure 8
Figure 11
Figure 11
= 600 V; T
/dt = 10 V/µs; gate open circuit
/dt = 20 V/µs; "without snubber"
/dt = 1 V/µs; gate open circuit
j
T
T
T
G
G
G
T
j
= 25 °C; see
T
D
= 0.1 A; T2+ G+; T
= 0.1 A; T2+ G-; T
= 0.1 A; T2- G-; T
= 25 °C; see
= 0.1 A; T
= 0.1 A; T2+ G+; T
= 0.1 A; T2+ G-; T
= 0.1 A; T2- G-; T
j
j
j
j
= 0.1 A; T
= 125 °C
= 125 °C; I
= 125 °C; I
= 125 °C; I
= 600 V; I
j
= 125 °C; exponential
j
= 25 °C;
j
G
= 125 °C;
T(RMS)
T(RMS)
T(RMS)
Figure 10
= 0.1 A;
Figure 9
j
j
j
j
= 25 °C;
= 16 A;
= 16 A;
= 16 A;
j
= 25 °C;
j
= 25 °C;
= 25 °C;
= 25 °C;
= 25 °C;
BTA316B-600E
Min
-
-
-
-
-
-
-
-
-
0.25
-
60
8
5
12
-
Typ
-
-
-
-
-
-
-
1.3
0.8
0.4
0.1
-
-
-
-
2
© NXP B.V. 2010. All rights reserved.
3Q Hi-Com Triac
Max
10
10
10
25
30
30
15
1.5
1.5
-
0.5
-
-
-
-
-
Unit
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
V/µs
A/ms
A/ms
A/ms
µs
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