BT139-800G NXP Semiconductors, BT139-800G Datasheet - Page 7

• Manufacturer Part Number: BT139-800G
• Description: Planar passivated four quadrant triac in a SOT78 plastic package intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 6.
BT139-800G
Product data sheet
Symbol
Static characteristics
I
I
I
V
V
I
Dynamic characteristics
dV
dV
t
GT
L
H
D
gt
T
GT
D
com
/dt
/dt
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
rate of rise of off-state
voltage
rate of change of
commutating voltage
gate-controlled turn-on
time
Conditions
V
T
V
T
V
T
V
T
V
T
V
T
V
T
V
T
V
I
V
see
V
see
V
V
waveform; gate open circuit
V
dI
gate open circuit
I
dI
All information provided in this document is subject to legal disclaimers.
T
TM
j
j
j
j
j
j
j
j
D
D
D
D
D
D
D
D
D
D
D
D
DM
D
com
G
= 20 A; T
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C; see
/dt = 5 A/µs
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; T
= 12 V; I
= 400 V; I
= 800 V; T
= 400 V; T
= 20 A; V
Figure 11
Figure 11
= 536 V; T
/dt = 7.2 A/ms; I
Rev. 5 — 23 March 2011
j
T
T
T
T
G
G
G
G
T
j
= 25 °C; see
T
D
= 0.1 A; T2+ G+;
= 0.1 A; T2+ G-;
= 0.1 A; T2- G-;
= 0.1 A; T2- G+;
= 0.1 A; T
= 25 °C; see
= 0.1 A; T2+ G+;
= 0.1 A; T2+ G-;
= 0.1 A; T2- G-;
= 0.1 A; T2- G+;
j
j
= 0.1 A; T
= 125 °C
= 95 °C;
= 800 V; I
j
Figure 7
Figure 7
Figure 7
Figure 7
Figure 8
Figure 8
Figure 8
Figure 8
= 125 °C; exponential
T
= 16 A;
j
= 25 °C;
j
G
= 125 °C;
Figure 10
= 0.1 A;
Figure 9
Min
-
-
-
-
-
-
-
-
-
-
-
0.25
-
200
10
-
BT139-800G
Typ
5
8
10
22
7
20
8
10
6
1.2
0.7
0.4
0.1
250
20
2
© NXP B.V. 2011. All rights reserved.
Max
50
50
50
100
60
90
60
90
60
1.6
1.5
-
0.5
-
-
-
4Q Triac
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
V/µs
V/µs
µs
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