BUK9606-55A NXP Semiconductors, BUK9606-55A Datasheet
BUK9606-55A
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BUK9606-55A Summary of contents
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... BUK9606-55A N-channel TrenchMOS logic level FET Rev. 04 — 31 May 2010 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 May 2010 BUK9606-55A N-channel TrenchMOS logic level FET Min ≤ 175 ° [ ° Figure 1 ...
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... ° ≤ Ω sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 May 2010 BUK9606-55A N-channel TrenchMOS logic level FET Min Typ Max - - - [ 154 [2] ...
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... V /I DSon δ All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 May 2010 BUK9606-55A N-channel TrenchMOS logic level FET 120 P der (%) 100 Normalized total power dissipation as a function of mounting base temperature 03nf02 = 10 μs ...
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... BUK9606-55A Product data sheet Conditions see Figure 4 mounted on a printed-circuit board ; minimum footprint −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 May 2010 BUK9606-55A N-channel TrenchMOS logic level FET Min Typ - - - 50 03nf03 t p δ ...
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... see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 May 2010 BUK9606-55A N-channel TrenchMOS logic level FET Min Typ Max 1 2.3 0 ...
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... V DS (V) Fig 6. 03aa36 g (S) max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 May 2010 BUK9606-55A N-channel TrenchMOS logic level FET Drain-source on-state resistance as a function of gate-source voltage; typical values 140 fs 120 ...
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... Fig 10. Gate-source voltage as a function of gate 03aa33 R DSon (mΩ) 120 180 ( ° Fig 12. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 May 2010 BUK9606-55A N-channel TrenchMOS logic level FET ...
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... Fig 14. Input, output and reverse transfer capacitances 100 175 ° 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 May 2010 BUK9606-55A N-channel TrenchMOS logic level FET Coss Crss 0 −2 − function of drain-source voltage; typical values 03ne94 = 25 ° 0.8 1.0 ...
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... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 May 2010 BUK9606-55A N-channel TrenchMOS logic level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2010. All rights reserved. SOT404 ...
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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK9606-55A separated from data sheet BUK9506_9606_9E06_55A-03. 20010723 Product data sheet - All information provided in this document is subject to legal disclaimers. ...
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... All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 May 2010 BUK9606-55A N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 May 2010 BUK9606-55A N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 31 May 2010 Document identifier: BUK9606-55A ...