PSMN013-100BS NXP Semiconductors, PSMN013-100BS Datasheet - Page 8

• Manufacturer Part Number: PSMN013-100BS
• Description: Standard level N-channel MOSFET in D2PAK package qualified to 175C
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN013-100BS
Product data sheet
Fig 13. Drain-source on-state resistance as a function
Fig 15. Gate charge waveform definitions
R
(mΩ)
DSon
30
25
20
15
10
of drain current; typical values
0
V
V
V
V
GS(pl)
V
DS
GS(th)
GS
GS
(V) = 4.5
Q
20
GS1
5
6
I
Q
D
GS
Q
GS2
40
Q
G(tot)
10
Q
GD
60
20
All information provided in this document is subject to legal disclaimers.
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I
D
(A)
80
Rev. 3 — 1 March 2012
N-channel 100V 13.9 mΩ standard level MOSFET in D2PAK
Fig 14. Gate-source voltage as a function of gate
Fig 16. Input, output and reverse transfer capacitances
(pF)
V
(V)
10
C
10
10
GS
10
10
4
3
2
8
6
4
2
0
10
charge; typical values
as a function of drain-source voltage; typical
values
0
−2
10
15
−1
PSMN013-100BS
V
DS
30
= 50V
1
10
45
© NXP B.V. 2012. All rights reserved.
V
Q
003a a d583
003aad581
DS
G
C
C
C
oss
rss
(nC)
iss
(V)
10
60
2
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