PSMN013-80YS NXP Semiconductors, PSMN013-80YS Datasheet - Page 6

• Manufacturer Part Number: PSMN013-80YS
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
Tested to JEDEC standards where applicable.
PSMN013-80YS_1
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(A)
I
D
(A)
I
D
70
60
50
40
30
20
10
60
50
40
30
20
10
0
0
function of drain-source voltage; typical values
function of gate-source voltage; typical values
Output characteristics: drain current as a
Transfer characteristics: drain current as a
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
20
0.5
10
2
8
T
j
6
= 175 °C
T
5.5
j
…continued
= 150 °C
1
4
Conditions
I
Figure 17
I
V
S
S
DS
V
1.5
= 25 A; V
= 50 A; dI
GS
T
j
V
= 40 V
(V) = 4
= 25 °C
003aad181
003aad183
GS
V
DS
(V)
4.5
(V)
5
GS
S
2
6
Rev. 01 — 25 June 2009
/dt = 100 A/µs; V
= 0 V; T
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
j
= 25 °C; see
Fig 6.
Fig 8.
R
(mΩ)
GS
(pF)
4000
3000
2000
1000
DSon
C
45
35
25
15
= 0 V;
5
0
function of gate-source voltage; typical values
of gate-source voltage; typical values
Input and reverse transfer capacitances as a
Drain-source on-state resistance as a function
0
0
3
5
PSMN013-80YS
Min
-
-
-
10
6
Typ
0.84
52
91
15
9
© NXP B.V. 2009. All rights reserved.
V
003aad187
003aad189
V
GS
Max
1.2
-
-
GS
C
(V)
C
(V)
rss
iss
12
20
Unit
V
ns
nC
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