BLF6G22LS-180RN NXP Semiconductors, BLF6G22LS-180RN Datasheet - Page 4

• Manufacturer Part Number: BLF6G22LS-180RN
• Description: 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF6G22-180RN_22LS-180RN_1
Product data sheet
Fig 2.
(dB)
G
p
17
16
15
14
0
V
Two-tone CW power gain and drain efficiency
as function of peak envelope load power;
typical values
DS
= 30 V; I
7.2 One-tone CW
7.3 Two-tone CW
G
D
p
Dq
60
= 1400 mA; f = 2140 MHz.
Fig 1.
V
One-tone CW power gain and drain efficiency as function of load power;
typical values
120
DS
= 30 V; I
P
L(PEP)
001aai642
(W)
Dq
Rev. 01 — 20 November 2008
(dB)
G
= 1400 mA; f = 2140 MHz.
180
p
17
16
15
14
60
40
20
0
(%)
0
D
G
Fig 3.
D
p
60
(dBc)
IMD
20
30
40
50
60
70
0
V
Two-tone CW intermodulation distortion as a
function of peak envelope load power; typical
values
DS
BLF6G22(LS)-180RN
= 30 V; I
120
20
Dq
P
L
= 1400 mA; f = 2140 MHz.
001aai641
(W)
40
180
Power LDMOS transistor
60
40
20
0
60
(%)
D
© NXP B.V. 2008. All rights reserved.
80
P
L(PEP)
001aai643
IMD3
IMD5
IMD7
(W)
100
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