BLF7G27L-135 NXP Semiconductors, BLF7G27L-135 Datasheet - Page 2

• Manufacturer Part Number: BLF7G27L-135
• Description: 135 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLF7G27L-135
Objective data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Pin
1
2
3
Type number
BLF7G27L-135
Symbol
V
V
I
T
T
Symbol Parameter
R
D
DS
GS
stg
j
th(j-c)
Connected to flange.
thermal resistance from junction to case
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Description
drain
gate
source
All information provided in this document is subject to legal disclaimers.
Package
Name Description
-
Rev. 1 — 1 November 2011
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
Conditions
[1]
Simplified outline
Conditions
T
case
= 80 C; P
BLF7G27L-135
1
2
Power LDMOS transistor
L
3
= 35 W
Graphic symbol
Min
-
0.5
-
65
-
© NXP B.V. 2011. All rights reserved.
2
Max
65
+13
28
+150
200
Typ
0.28
sym112
Version
SOT502A
1
3
2 of 13
Unit
K/W
Unit
V
V
A
C
C