BLF7G27LS-140 NXP Semiconductors, BLF7G27LS-140 Datasheet - Page 8

• Manufacturer Part Number: BLF7G27LS-140
• Description: 140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G27L-140_7G27LS-140
Product data sheet
Fig 11. Single carrier W-CDMA ACPR at 5 MHz as a
Fig 13. Single carrier W-CDMA peak-to-average power
ACPR
(dBc)
PAR
(dB)
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
−20
−30
−40
−50
−60
5M
8
7
6
5
4
3
0
V
function of average output power;
typical values
0
V
ratio as a function of average output power;
typical values
DS
DS
(1)
(2)
(3)
= 28 V; I
= 28 V; I
20
20
Dq
Dq
= 1300 mA.
= 1300 mA.
(1)
(2)
(3)
40
40
60
60
P
P
All information provided in this document is subject to legal disclaimers.
L(AV)
L(AV)
001aan519
001aan521
(W)
(W)
BLF7G27L-140; BLF7G27LS-140
80
80
Rev. 3 — 22 July 2011
Fig 12. Single carrier W-CDMA ACPR at 10 MHz as a
Fig 14. Single carrier W-CDMA peak output power as a
ACPR
(dBc)
P
(W)
L(M)
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
−30
−40
−50
−60
−70
240
160
10M
80
0
0
0
V
function of average output power;
typical values
V
function of average output power;
typical values
DS
DS
= 28 V; I
= 28 V; I
20
20
Dq
Dq
= 1300 mA.
= 1300 mA.
40
40
Power LDMOS transistor
(1)
(2)
(3)
60
60
© NXP B.V. 2011. All rights reserved.
P
P
(1)
(2)
(3)
L(AV)
L(AV)
001aan520
001aan522
(W)
(W)
80
80
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