EP4CE75F29I7 Altera Corporation, EP4CE75F29I7 Datasheet - Page 6
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EP4CE75F29I7
Manufacturer Part Number
EP4CE75F29I7
Description
IC CYCLONE IV FPGA 75K 780FBGA
Manufacturer
Altera Corporation
Series
CYCLONE® IV Er
Datasheet
1.EP4CE15F23C7N.pdf
(44 pages)
Specifications of EP4CE75F29I7
Number Of Logic Elements/cells
75408
Number Of Labs/clbs
4713
Total Ram Bits
2810880
Number Of I /o
426
Number Of Gates
-
Voltage - Supply
1.15 V ~ 1.25 V
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 100°C
Package / Case
780-BBGA
Lead Free Status
Contains lead
Rohs Status
RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
EP4CE75F29I7N
Manufacturer:
ALTERA/阿尔特拉
Quantity:
20 000
1–6
Table 1–4. Recommended Operating Conditions for Cyclone IV GX Devices (Part 2 of 2)—Preliminary
Table 1–5. ESD for Cyclone IV Devices GPIOs and HSSI I/Os
Cyclone IV Device Handbook,
Volume 3
V
V
V
V
V
T
t
I
Notes to
(1) All VCCA pins must be powered to 2.5 V (even when PLLs are not used) and must be powered up and powered down at the same time.
(2) You must connect V
(3) Power supplies must rise monotonically.
(4) V
(5) You must set V
(6) The CLKIN pins in I/O Banks 3B and 8B can support single-ended I/O standard when the pins are used to clock left PLLs in non-transceiver
(7) The POR time for Standard POR ranges between 50 and 200 ms. V
(8) The POR time for Fast POR ranges between 3 and 9 ms. V
V
V
Notes to
(1) The passing voltage for EP4CGX15 and EP4CGX30 row I/Os is ±1000V.
(2) This value is applicable only to Cyclone IV GX devices.
RAMP
Diode
J
CCH_GXB
CCA_GXB
CCL_GXB
I
O
ESDHBM
ESDCDM
Symbol
I/O Banks 3 and 9 only support V
Bank 8 must be powered up to 1.5, 1.8, 2.5, 3.0, and 3.3 V.
applications.
operating range within 50 ms.
range within 3 ms.
CCIO
Symbol
Table
Table
for all I/O banks must be powered up during device operation. Configurations pins are powered up by V
ESD Performance
1–4:
1–5:
Transceiver output buffer power supply
Transceiver PMA and auxiliary power
supply
Transceiver PMA and auxiliary power
supply
DC input voltage
DC output voltage
Operating junction temperature
Power supply ramp time
Magnitude of DC current across
PCI-clamp diode when enabled
CC_CLKIN
CCD_PLL
This section lists the electrostatic discharge (ESD) voltages using the human body
model (HBM) and charged device model (CDM) for Cyclone IV devices general
purpose I/Os (GPIOs) and high-speed serial interface (HSSI) I/Os.
ESD for Cyclone IV devices GPIOs and HSSI I/Os.
to 2.5 V if you use CLKIN as a high-speed serial interface (HSSI) refclk or as a DIFFCLK input.
ESD voltage using the HBM (GPIOs)
ESD using the HBM (HSSI I/Os)
ESD using the CDM (GPIOs)
ESD using the CDM (HSSI I/Os)
to V
Parameter
CCINT
CCIO
through a decoupling capacitor and ferrite bead.
of 1.5, 1.8, 2.5, 3.0, and 3.3 V. For fast passive parallel (FPP) configuration mode, the V
Parameter
CCINT
, V
CCA
(2)
(2)
Standard power
CCINT
, and V
For commercial use
(1)
For industrial use
, V
Fast POR
CCA
Conditions
CCIO
(POR)
, and V
of I/O Banks 3, 8, and 9 must reach the recommended operating
—
—
—
—
—
—
CCIO
(7)
- on reset
(8)
of I/O Banks 3, 8, and 9 must reach the recommended
Passing Voltage
± 2000
± 1000
± 500
± 250
2.375
2.375
50 µs
50 µs
1.16
–0.5
Min
–40
Chapter 1: Cyclone IV Device Datasheet
—
0
0
November 2011 Altera Corporation
CCIO
of I/O Banks 3, 8, and 9 where
Typ
2.5
1.2
2.5
—
—
—
—
—
—
—
Table 1–5
Operating Conditions
50 ms
2.625
2.625
V
3 ms
1.24
Max
100
3.6
85
10
CCIO
CCIO
Unit
V
V
V
V
level of I/O
lists the
Unit
mA
°C
—
—
°C
V
V
V
V
V