EP4S100G5F45I3 Altera Corporation, EP4S100G5F45I3 Datasheet - Page 9

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EP4S100G5F45I3

Manufacturer Part Number
EP4S100G5F45I3
Description
IC STRATIX IV FPGA 530K 1932FBGA
Manufacturer
Altera Corporation
Series
STRATIX® IV GTr
Datasheet

Specifications of EP4S100G5F45I3

Number Of Logic Elements/cells
531200
Number Of Labs/clbs
21248
Total Ram Bits
28033024
Number Of I /o
781
Number Of Gates
-
Voltage - Supply
0.92 V ~ 0.98 V
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 100°C
Package / Case
1932-BBGA
Lead Free Status
Contains lead
Rohs Status
RoHS non-compliant

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Chapter 1: Overview for the Stratix IV Device Family
Architecture Features
June 2011 Altera Corporation
PLLs
I/O Features
High-Speed Differential I/O with DPA and Soft-CDR
External Memory Interfaces
Three to 12 PLLs per device supporting spread-spectrum input tracking,
programmable bandwidth, clock switchover, dynamic reconfiguration, and delay
compensation
On-chip PLL power supply regulators to minimize noise coupling
Sixteen to 24 modular I/O banks per device with 24 to 48 I/Os per bank designed
and packaged for optimal simultaneous switching noise (SSN) performance and
migration capability
Support for a wide range of industry I/O standards, including single-ended
(LVTTL/CMOS/PCI/PCIX), differential (LVDS/mini-LVDS/RSDS),
voltage-referenced single-ended and differential (SSTL/HSTL Class I/II) I/O
standards
On-chip series (R
single-ended I/Os and on-chip differential (R
Programmable output drive strength, slew rate control, bus hold, and weak
pull-up capability for single-ended I/Os
User I/O:GND:V
interface
Programmable transmitter differential output voltage (V
high-speed LVDS I/O
Dedicated circuitry on the left and right sides of the device to support differential
links at data rates from 150 Mbps to 1.6 Gbps
Up to 98 differential SERDES in Stratix IV GX devices, up to 132 differential
SERDES in Stratix IV E devices, and up to 47 differential SERDES in Stratix IV GT
devices
DPA circuitry at the receiver automatically compensates for channel-to-channel
and channel-to-clock skew in source synchronous interfaces
Soft-CDR circuitry at the receiver allows implementation of asynchronous serial
interfaces with embedded clocks at up to 1.6 Gbps data rate (SGMII and GbE)
Support for existing and emerging memory interface standards such as DDR
SDRAM, DDR2 SDRAM, DDR3 SDRAM, QDRII SRAM, QDRII+ SRAM, and
RLDRAM II
DDR3 up to 1,067 Mbps/533 MHz
Programmable DQ group widths of 4 to 36 bits (includes parity bits)
Dynamic OCT, trace mismatch compensation, read-write leveling, and half-rate
register capabilities provide a robust external memory interface solution
S
CC
) and on-chip parallel (R
ratio of 8:1:1 to reduce loop inductance in the package—PCB
T
) termination with auto-calibration for
D
) termination for differential I/Os
Stratix IV Device Handbook Volume 1
OD
) and pre-emphasis for
1–9

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