TSV634 STMicroelectronics, TSV634 Datasheet - Page 9
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TSV634
Manufacturer Part Number
TSV634
Description
Micro-power CMOS op-amp
Manufacturer
STMicroelectronics
Datasheet
1.TSV632A.pdf
(28 pages)
Specifications of TSV634
Low Power Consumption
60 μA typ at 5 V
Low Supply Voltage
1.5 V - 5.5 V
Gain Bandwidth Product
880 kHz typ
Low Power Shutdown Mode
5 nA typ
Low Offset Voltage
800 μV max (A version)
Low Input Bias Current
1 pA typ
High Tolerance To Esd
4 kV HBM
Extended Temperature Range
-40° C to +125° C
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TSV63x, TSV63xA
Table 7.
1. Guaranteed by design.
Table 8.
DC performance
THD+e
Symbol
Symbol
I
OLeak
G
SR
I
V
V
φm
t
t
I
e
I
CC
on
off
IH
IL
IH
IL
m
n
n
Phase margin
Gain margin
Slew rate
Equivalent input noise
voltage
Total harmonic distortion +
noise
Supply current in shutdown
mode (all operators)
Amplifier turn-on time
Amplifier turn-off time
SHDN logic high
SHDN logic low
SHDN current high
SHDN current low
Output leakage in shutdown
mode
Electrical characteristics at V
and R
Shutdown characteristics at V
L
Parameter
Parameter
connected to V
CC
R
R
R
f = 1 kHz
f = 10 kHz
V
100kΩ , V
SHDN = V
T
T
R
V
R
V
SHDN = V
SHDN = V
SHDN = V
T
/2 (unless otherwise specified) (continued)
CC
min
min
out
out
min
L
L
L
L
L
= 2 kΩ ,
= 2 kΩ ,
= 2 kΩ, C
= 2 kΩ, C
= 2 kΩ, C
= V
= V
= 5V, f = 1kHz, A
Doc ID 15688 Rev 4
< T
< T
< T
CC+
CC
CC-
CC+
op
op
op
icm
= 5 V
CC-
CC+
CC-
CC-
= +5 V with V
< 85° C
< 125° C
< 125° C
Conditions
Conditions
V to V
- 0.5 V to V
= V
L
L
L
= 100 pF
= 100 pF
= 100 pF, Av=1
CC
CC-
/2, V
+0.2 V
V
out
= 1, R
CC+
= 2V
CC-
- 0.7 V
L
PP
= 0 V, V
=
Min.
Min.
0.25
2
icm
Electrical characteristics
= V
0.002
Typ.
200
Typ.
0.34
20
10
10
50
CC
48
13
60
33
5
1
/2, T
Max.
200
amb
Max.
1.5
0.8
50
= 25° C,
Degrees
Unit
Unit
V/μs
nA
nA
µA
pA
pA
pA
nA
ns
ns
----------- -
V
V
dB
nV
%
Hz
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