TS861 STMicroelectronics, TS861 Datasheet - Page 6

• Manufacturer Part Number: TS861
• Description: Rail-to-rail micropower BiCMOS comparator
• Manufacturer: STMicroelectronics

Electrical characteristics
Note:
6/19
Table 5.
1. Maximum values including unavoidable inaccuracies of the industrial test.
2. Design evaluation.
Limits are 100% production tested at 25° C. Limits over temperature are guaranteed through
correlation and by design.
Symbol
CMR
T
T
ΔV
SVR
V
A
V
V
I
T
I
I
T
PLH
PHL
CC
IO
OH
IB
OL
VD
IO
R
F
IO
Input offset voltage (V
Input offset voltage drift
Input offset current
Input bias current
High level output voltage
Low level output voltage
Large signal voltage gain
Common mode rejection ratio
Supply voltage rejection ratio
Supply current per comparator
Propagation delay from output low to output high
V
Propagation delay from output high to output low
V
Fall time
Rise time
ICM
ICM
TS861/2/4
Tmin<T<Tmax
Tmin<T<Tmax
Tmin<T<Tmax
I
Tmin<T<Tmax
I
Tmin<T<Tmax
0 < V
2.7 < V
no load, output low
no load, output high
overdrive = 10 mV
overdrive = 100 mV
overdrive = 10 mV
overdrive = 100 mV
f = 10 kHz, C
f = 10 kHz, C
SOURCE
SINK
Electrical characteristics at V
(unless otherwise specified)
= 5 V, f = 10 kHz, C
= 5 V, f = 10 kHz, C
ICM
= 5 mA
CC
= 5 mA
< 10 V
< 10V
L
L
= 50 pF, overdrive = 100 mV
= 50 pF, overdrive = 100 mV
(1)
(1)
ICM
Parameter
Doc ID 6422 Rev 2
L
L
(2)
= V
= 50 pF
= 50 pF
CC
/ 2)
CC
= +10 V, T
amb
= 25° C
Min.
9.45
9.6
TS861, TS862, TS864
Typ.
240
9.8
0.2
0.5
2.6
0.4
75
80
10
20
20
3
6
1
1
7
3
Max.
0.55
150
300
300
600
0.4
15
18
14
16
μV/°C
Unit
mV
pA
pA
dB
dB
dB
μA
µs
µs
ns
ns
V
V