STPS3H100 STMicroelectronics, STPS3H100 Datasheet - Page 3

• Manufacturer Part Number: STPS3H100
• Description: Schottky Barrier, Power Schottky
• Manufacturer: STMicroelectronics

STPS3H100
Figure 1.
Figure 3.
Figure 5.
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
12
11
10
0.001
1.E-03
9
8
7
6
5
4
3
2
1
0
0.01
0.1
0.0
I (A)
P
M
1
0.01
F(AV)
P
P
ARM
I
M
ARM
(W)
(1 µs)
0.5
(t p )
δ
=0.5
Average forward power dissipation
versus average forward current
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration
(maximum values) (SMB)
t
0.1
1.0
1.E-02
1
1.5
δ=0.05
t (µs)
p
I
F(AV)
t(s)
(A)
2.0
δ=0.1
10
1.E-01
δ=0.2
2.5
100
δ
=tp/T
3.0
δ=0.5
T
Doc ID 16776 Rev 1
T
T
a
T
a
=125 °C
a
=25 °C
=75 °C
SMB
1.E+00
tp
δ=1
1000
3.5
Figure 2.
Figure 4.
Figure 6.
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
40
35
30
25
20
15
10
1.E-03
5
0
1.2
0.8
0.6
0.4
0.2
I (A)
I
M
1
0
0
F(AV)
25
P
δ
ARM
=tp/T
P
I
M
(A)
ARM
(25 °C)
25
T
(T j )
δ
=0.5
Average forward current versus
ambient temperature (δ = 0.5)
Normalized avalanche power
derating versus junction
temperature
Non repetitive surge peak forward
current versus overload duration
(maximum values) (SMB flat)
t
tp
50
50
1.E-02
75
75
T
R
T (°C)
th(j-a)
amb
t(s)
j
=R
th(j-l)
(°C)
100
100
1.E-01
SMB
SMB
125
Characteristics
125
150
T
T
T
SMB flat
L
L
L
=125 °C
SMB flat
SMB flat
=25 °C
=75 °C
1.E+00
150
175
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