STPS15L60C STMicroelectronics, STPS15L60C Datasheet - Page 2

• Manufacturer Part Number: STPS15L60C
• Description: Low Drop Power Schottky Rectifier
• Manufacturer: STMicroelectronics

STPS15L60CB
THERMAL RESISTANCES
When the diodes 1 and 2 are used simultaneously :
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test : * tp = 380 µs, < 2%
To evaluate the conduction losses use the following equation :
P = 0.32 x I
Fig. 1: Conduction losses versus average current.
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig. 3: Normalized avalanche power derating
versus pulse duration.
0.001
2/4
0.01
Symbol
Symbol
0.1
R
Tj(diode 1) = P(diode1) x R
R
0
0.01
1
PF(av)(W)
V
th(j-c)
I
th(c)
P
R
P
F
ARM
ARM p
*
*
1
(1µs)
(t )
F(AV)
= 0.05
0.1
Junction to case
Coupling
2
Reverse leakage current
Forward voltage drop
= 0.1
+ 0.027 I
3
Parameter
1
4
= 0.2
IF(av)(A)
t (µs)
p
F
5
2
(RMS)
th(j-c)
10
6
= 0.5
(Per diode) + P(diode 2) x R
7
Parameter
100
8
Tj = 25°C
Tj = 125°C
Tj = 25 C
Tj = 125°C
Tj = 25 C
Tj = 125°C
Tj = 25 C
Tj = 125°C
=tp/T
T
= 1
9
Tests Conditions
1000
tp
10
Fig. 2: Average forward current versus ambient
temperature ( = 0.5).
9
8
7
6
5
4
3
2
1
0
Fig. 4: Normalized avalanche power derating
versus junction temperature.
1.2
0.8
0.6
0.4
0.2
0
1
0
V
I
I
I
I
I
I
IF(av)(A)
F
F
F
F
F
F
0
P
R
= 7.5 A
= 7.5 A
= 12 A
= 12 A
= 15 A
= 15 A
ARM
P
=tp/T
= V
ARM p
Per diode
th(c)
(25°C)
T
RRM
(t )
25
Total
25
tp
50
50
Min.
Rth(j-a)=70°C/W
Rth(j-a)=Rth(j-c)
Tamb(°C)
T (°C)
j
75
75
Typ.
0.52
0.62
0.66
45
Value
2.4
0.7
4
100
100
Max.
0.62
0.57
0.76
0.68
0.82
0.72
200
60
125
125
Unit
Unit
C/W
mA
µA
V
150
150