STPS8H100 STMicroelectronics, STPS8H100 Datasheet - Page 3

• Manufacturer Part Number: STPS8H100
• Description: High Voltage Power Schottky Rectifier
• Manufacturer: STMicroelectronics

STPS8H100
Figure 3.
Figure 5.
Figure 7.
10
100
1.2
0.8
0.6
0.4
0.2
8
6
4
2
0
90
80
70
60
50
40
30
20
10
1
0
1E-3
0
0
I F(av) (A)
25
P
I M (A)
P
ARM
I
δ
M
ARM p
=t p /T
=t p /T
20
(25°C)
(t )
δ
T
=0.5
t
Normalized avalanche power
derating versus junction
temperature
Average forward current versus
ambient temperature, δ = 0.5,
(TO-220FPAC)
Non repetitive surge peak forward
current versus overload duration
- maximum values (TO-220FPAC)
50
40
R th(j-a) =R th(j-c)
t p t p
1E-2
60
R th(j-a) =50°C/W
75
T amb (°C)
80
T (°C)
t(s)
j
100
T c =100°C
100
1E-1
120
140
T c =75°C
125
T c =125°C
160
1E+0
180
150
Figure 4.
Figure 6.
Figure 8.
10
160
140
120
100
1.0
0.8
0.6
0.4
0.2
0.0
80
60
40
20
8
6
4
2
0
1E-4
1E-3
0
0
I F(av) (A)
Z th(j-c) /R th(j-c)
I M (A)
δ = 0.1
δ = 0.2
δ = 0.5
I
M
δ
=t p /T
=t p /T
20
δ
=0.5
t
T
Average forward current versus
ambient temperature, δ = 0.5,
(TO-220AC, D
Non repetitive surge peak
forward current versus overload
duration - maximum values, per
diode (TO-220AC, D
impedance junction to case versus
pulse duration (TO-220AC, D
Relative variation of thermal
40
1E-3
t p t p
Single pulse
1E-2
60
T amb (°C)
80
t p (s)
1E-2
t(s)
R th(j-a) =15°C/W
2
100
PAK)
T c =100°C
1E-1
120
R th(j-a) =R th(j-c)
2
1E-1
PAK)
Characteristics
140
δ
=t p /T
=t p /T
T c =75°C
T c =125°C
160
T
2
t p t p
PAK)
1E+0
1E+0
180
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