STPS16170C STMicroelectronics, STPS16170C Datasheet - Page 2

• Manufacturer Part Number: STPS16170C
• Description: High Voltage Power Schottky Rectifier
• Manufacturer: STMicroelectronics

Characteristics
1
Table 1.
1.
Table 2.
Table 3.
1. Pulse test: t
2. Pulse test: t
2/10
Symbol
Symbol
I
F(RMS)
Symbol
V
I
P
dV/dt
V
I
I
F(AV)
R
T
FSM
R
R
RRM
ARM
T
F
dP
-------------- -
stg
th(j-c)
(1)
th(c)
(2)
dT j
j
tot
<
------------------------- -
R th j a
Reverse leakage current
Forward voltage drop
Repetitive peak reverse voltage
RMS forward current
Average forward current, δ = 0.5
Surge non repetitive forward current
Releative peak avalanche power
Storage temperature range
Maximum operating junction temperature
Critical rate of rise of reverse voltage
Thermal parameters
Static electrical characteristics
p
p
Characteristics
Absolute ratings (limiting values per diode, T
To evaluate the conduction losses use the following equation:
P = 0.64 x I
Junction to case
Coupling
(
1
= 5 ms, δ < 2 %
= 380 µs, δ < 2 %
–
)
thermal runaway condition for a diode on its own heatsink
Parameter
F(AV)
+ 0.014 x I
F
Parameter
2
(RMS)
Parameter
T
T
T
T
T
T
j
j
j
j
j
j
= 25° C
= 125° C
= 25° C
= 125° C
= 25° C
= 125° C
(1)
T
t
T
p
c
j
Test conditions
= 10 ms Sinusoidal
= 25° C
= 150° C
Per diode
Total
V
I
I
F
F
R
= 8 A
= 16 A
amb
= V
RRM
= 25° C unless otherwise specified)
Per diode
Total package
t
p
= 1µs
Min.
0.70
Typ
0.8
-65 to + 175
Value
1.8
0.6
3
10 000
Value
4700
170
175
20
75
16
8
STPS16170C
Max.
0.92
0.75
0.86
15
15
1
°C/W
Unit
Unit
V/µs
Unit
mA
µA
°C
°C
W
V
A
A
A
V