STTH803 STMicroelectronics, STTH803 Datasheet - Page 3

• Manufacturer Part Number: STTH803
• Description: Ultrafast Recovery Rectifier Diode
• Manufacturer: STMicroelectronics

Fig. 1: Conduction losses versus average current.
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
Fig. 5: Reverse recovery time versus dI
confidence).
12
10
1.0
0.8
0.6
0.4
0.2
0.0
100
8
6
4
2
0
90
80
70
60
50
40
30
20
10
1E-3
0
0
P1(W)
Zth(j-c)/Rth(j-c)
0
trr(ns)
= 0.1
= 0.5
= 0.2
1
50 100 150 200 250 300 350 400 450 500
Single pulse
2
IF=0.5*IF(av)
= 0.05
3
1E-2
= 0.1
4
dIF/dt(A/µs)
IF(av) (A)
IF=2*IF(av)
tp(s)
5
= 0.2
6
1E-1
7
= 0.5
IF=IF(av)
=tp/T
8
=tp/T
F
VR=200V
Tj=125°C
/dt (90%
T
T
= 1
9
tp
1E+0
tp
10
Fig. 2: Forward voltage drop versus forward
current (maximum values
100.0
Fig. 4:
dI
16
14
12
10
Fig. 6:
values).
0.60
0.50
0.40
0.30
0.20
0.10
0.00
10.0
8
6
4
2
0
F
1.0
0.1
0
IRM(A)
/dt (90% confidence).
0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
0
VR=200V
Tj=125°C
S factor
IFM(A)
50
50 100 150 200 250 300 350 400 450 500
Peak reverse recovery current versus
Softness factor versus dI
100 150 200 250 300 350 400 450 500
Tj=125°C
Tj=75°C
dIF/dt(A/µs)
dIF/dt(A/µs)
VFM(V)
IF=IF(av)
Tj=25°C
IF=2*IF(av)
STTH803D/G
IF=0.5*IF(av)
F
/dt (typical
VR=200V
Tj=125°C
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