STTH8R04 STMicroelectronics, STTH8R04 Datasheet - Page 2

• Manufacturer Part Number: STTH8R04
• Description: Ultrafast recovery diodes
• Manufacturer: STMicroelectronics

Characteristics
1
Table 1.
Table 2.
Table 3.
1. Pulse test: t
2. Pulse test: t
2/11
Symbol
Symbol
I
V
V
F(RMS)
I
V
I
I
F(AV)
I
T
FRM
FSM
R
RRM
RSM
F
T
stg
(1)
(2)
j
Symbol
R
th(j-c)
Repetitive peak reverse voltage
Repetitive peak reverse voltage
RMS forward current
Average forward current, δ = 0.5
Repetitive peak forward current
Surge non repetitive forward current t
Storage temperature range
Operating junction temperature range
Reverse leakage current
Forward voltage drop
p
p
Characteristics
Absolute ratings (limiting values at 25° C, unless otherwise specified)
Thermal parameters
Static electrical characteristics
To evaluate the conduction losses use the following equation:
P = 0.83 x I
= 5 ms, δ < 2 %
= 380 µs, δ < 2 %
Junction to case
Parameter
F(AV)
+ 0.034 x I
F
2
(RMS)
Parameter
T
T
T
T
T
TO-220AC / D
TO220AC Ins
TO-220AC / D
TO220FPAC
TO220AC Ins
j
j
j
j
j
Parameter
p
= 25° C
= 125° C
= 25° C
= 100° C
= 150° C
= 10 ms Sinusoidal
TO-220AC / D
TO220FPAC
TO220AB Ins
Test conditions
2
2
V
I
PAK / TO220FPAC
PAK
F
R
= 8 A
= V
2
PAK
T
T
T
RRM
t
p
c
c
c
= 145° C
= 110° C
= 115° C
= 10 µs, F = 1 kHz
Min.
Value
1.05
Typ
0.9
10
2.5
5.5
6
-65 to +175
-40 to +175
Value
400
400
165
120
30
20
8
Max.
100
1.5
1.3
1.1
10
STTH8R04
°C/W
Unit
Unit
Unit
° C
° C
µA
V
V
A
A
A
A
V