STTH16R04C STMicroelectronics, STTH16R04C Datasheet - Page 5

• Manufacturer Part Number: STTH16R04C
• Description: Ultrafast recovery diodes
• Manufacturer: STMicroelectronics

STTH16R04C
Figure 7.
Figure 9.
Figure 11. Forward recovery time versus dI
200
180
160
140
120
100
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
700
600
500
400
300
200
100
80
60
40
20
0
0
25
10
Q
0
RR
V
I
R
F
=320 V
[T ]/Q
= 8 A
V
I
R
j
F
=320 V
= 8 A
RR
[T = 125° C] and I
50
100
Reverse recovery charges versus
dI
Relative variations of dynamic
parameters versus junction
temperature
(typical values)
j
F
/dt (typical values)
I
RM
Q
RR
200
75
RM
T
[T ]/I
j
100
(°C)
j
T
RM
T
j
=125 °C
j
=25 °C
[T = 125° C]
100
300
j
V
FR
dI
125
400
=1.1 x V
T
dI
F
/dt(A/µs)
j
I
=125°C
F
F
=8 A
/dt(A/µs)
F
max.
1000
F
150
500
/dt
Figure 8.
Figure 10. Transient peak forward voltage
Figure 12. Junction capacitance versus
100
80
70
60
50
40
30
20
10
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
0
0
1
0
T
j
=125 °C
I
F
=8 A
2
50
100
Thermal resistance junction to
ambient versus copper surface
under tab (Epoxy printed circuit
board FR4, e
versus dI
reverse voltage applied (typical
values)
4
150
6
10
200
8
F
dI
/dt (typical values)
F
S
/dt(A/µs)
V
CU
R
250
10
(V)
(cm²)
CU
= 35 µm)
300
12
100
350
14
Characteristics
V
400
OSC
16
F=1MHz
T
=30mV
j
=25°C
450
18
RMS
D²PAK
1000
500
5/10
20