STTH1002C STMicroelectronics, STTH1002C Datasheet

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STTH1002C

Manufacturer Part Number
STTH1002C
Description
High Efficiency Ultrafast Diode
Manufacturer
STMicroelectronics
Datasheet

Specifications of STTH1002C

Insulated Package
TO-220FPAB

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MAIN PRODUCT CHARACTERISTICS
FEATURES AND BENEFITS
DESCRIPTION
Dual center tap rectifier suited for Switch Mode
Power Supplies and High frequency DC to DC
converters.
Packaged
TO220-FPAB and I
for use in low voltage, high frequency inverters,
free wheeling and polarity protection applications.
ABSOLUTE RATINGS (limiting values, per diode)
March 2004 - Ed: 4
Symbol
I
Suited for SMPS
Low losses
Low forward and reverse recovery times
Insulated package: TO-220FPAB
High junction temperature
Low leakage current
V
F(RMS)
I
I
F(AV)
T
FSM
RRM
Tj
stg
Tj (max)
V
t
rr
V
I
F
F(AV)
®
RRM
(typ)
(typ)
Repetitive peak reverse voltage
RMS forward current
Average forward
current δ =0.5
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
in
DPAK,
2
PAK, this device is intended
D
2
PAK,
Up to 2 x 8A
175 °C
0.78 V
200 V
20 ns
TO-220AB / TO-220FPAB / I
DPAK
TO-220AB / I
/ D
TO-220FPAB
HIGH EFFICIENCY ULTRAFAST DIODE
TO-220AB,
2
PAK / DPAK
Parameter
2
PAK
Tc = 155°C
Tc = 150°C
Tc = 135°C
Tc = 125°C
Tc = 140°C
Tc = 120°C
Tc = 110°C
Tc = 75°C
tp = 10 ms Sinusoidal
STTH1002CFP
STTH1002CT
TO-220FPAB
TO-220AB
2
PAK / D
A1
A1
STTH1002CB
K
K
Per diode
Per device
Per diode
Per device
Per diode
Per device
Per diode
Per device
A2
A1
A2
2
A2
K
PAK /
DPAK
A1
STTH1002C
K
A2
STTH1002CR
STTH1002CG
K
- 65 + 175
Value
D
K
I
200
175
2
20
10
10
16
10
16
50
2
PAK
5
8
5
8
PAK
A1
K
A1
A2
K
Unit
A2
°C
°C
V
A
A
A
1/8

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STTH1002C Summary of contents

Page 1

... Tc = 140° 120° 110° 75° Sinusoidal STTH1002C TO-220AB I PAK STTH1002CR PAK STTH1002CG DPAK STTH1002CB Value 200 2 2 PAK / D PAK / 20 10 Per diode 5 Per device 10 Per diode 8 Per device 16 Per diode ...

Page 2

... STTH1002C THERMAL PARAMETERS Symbol R Junction to case TO-220AB / I th (j-c) / DPAK TO-220FPAB R Coupling TO-220AB / I th (j-c) TO-220FPAB When the diodes 1 and 2 are used simultaneously: ∆ Tj (diode1) = P(diode1 th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage R current V ** Forward voltage drop F Pulse test 5ms, δ < 380µ ...

Page 3

... I PAK th(j-c) 1.0 Single pulse T =25°C j 0.1 2.00 2.25 2.50 2.75 3.00 1.E-03 Fig. 4: Junction capacitance versus reverse pulse duration voltage applied (typical values, per diode). C(pF) 100 10 0 1.E-01 1.E+00 STTH1002C T =150° =25° (V) FM 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2 PAK, DPAK). /R th(j-c) t (s) p 1.E-02 1.E- ...

Page 4

... STTH1002C Fig. 5: Reverse recovery charges versus dI (typical values, per diode). Q (nC) rr 240 I =5A 220 F V =160V R 200 180 160 140 120 T =125°C j 100 /dt(A/µ 100 Fig. 7: Peak reverse recovery current versus dI (typical values, per diode ...

Page 5

... Ordering code Marking STTH1002CB STTH1002CB STTH1002CB-TR STTH1002CB STTH1002CT STTH1002CT STTH1002CG STTH1002CG STTH1002CG-TR STTH1002CG STTH1002CR STTH1002CR STTH1002CFP STTH1002CFP PACKAGE MECHANICAL DATA DPAK FOOTPRINT 6.7 1.6 2.3 2.3 Package Weight DPAK DPAK TO-220AB 2 D PAK 2 D PAK 2 I PAK TO-220FPAB REF ...

Page 6

... STTH1002C PACKAGE MECHANICAL DATA 2 D PAK FLAT ZONE NO LESS THAN 2mm FOOTPRINT DIMENSIONS (in millimeters) 16.90 10.30 8.90 6/8 REF 5.08 1.30 3.70 DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 2.49 2.69 0.098 ...

Page 7

... REF Dia Dia. STTH1002C DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 2.49 2.69 0.098 0.106 0.70 0.93 0.028 0.037 1.14 1.17 0.044 0.046 1.14 1.17 0.044 0.046 0.45 0.60 0.018 0.024 1.23 1.36 0.048 0.054 8 ...

Page 8

... STTH1002C PACKAGE MECHANICAL DATA TO-220AB H2 Dia Epoxy meets UL94,V0 ■ Cooling method: by conduction (method C) ■ Recommended torque value (TO-220AB): 0.8 N.m. ■ Maximum torque value (TO-220AB): 1.0 N.m. ■ Recommended torque value (TO-220FPAB): 0.55 N.m. ■ Maximum torque value (TO-220FPAB): 0.7 N.m. ■ Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use ...

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