STTH812 STMicroelectronics, STTH812 Datasheet - Page 2

• Manufacturer Part Number: STTH812
• Description: Ultrafast recovery -1200 V diode
• Manufacturer: STMicroelectronics

Characteristics
1
Table 1.
Table 2.
Table 3.
1. Pulse test: t
2. Pulse test: t
2/11
Symbol
Symbol
I
F(RMS)
Symbol
V
I
V
I
I
I
F(AV)
R
T
FRM
FSM
R
RRM
T
F
stg
th(j-c)
(1)
(2)
j
Reverse leakage current
Forward voltage drop
Repetitive peak reverse voltage
RMS forward current
Average forward current, δ = 0.5
Repetitive peak forward current
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
p
p
Characteristics
Absolute ratings (limiting values at 25° C, unless otherwise specified)
Thermal parameters
Static electrical characteristics
To evaluate the conduction losses use the following equation:
P = 1.5 x I
Junction to case
= 5 ms, δ < 2 %
= 380 µs, δ < 2 %
Parameter
F(AV)
+ 0.05 I
F
2
(RMS)
Parameter
Parameter
T
T
T
T
T
j
j
j
j
j
= 25° C
= 125° C
= 25° C
= 125° C
= 150° C
TO-220AC / D
TO-220AC Ins
TO-220AC / D
TO-220FPAC
TO-220AC Ins
t
t
p
p
Test conditions
= 5 µs, F = 5 kHz square
= 10 ms Sinusoidal
TO-220AC / D
TO-220FPAC
TO-220AC Ins
V
I
F
R
= 8 A
= V
2
2
PAK / TO-220FPAC
PAK
RRM
2
PAK
T
T
T
c
c
c
= 140° C
= 75° C
= 115° C
Min.
1.30
1.25
Typ
-65 to + 175
5
Value
1.9
5.4
3.1
Value
1200
100
175
30
20
80
8
Max.
2.2
2.0
1.9
50
8
STTH812
°C/W
Unit
Unit
Unit
°C
°C
V
A
A
A
A
µA
V