STTH1212 STMicroelectronics, STTH1212 Datasheet - Page 5

• Manufacturer Part Number: STTH1212
• Description: Ultrafast recovery - 1200 V diode
• Manufacturer: STMicroelectronics

STTH1212
Figure 9.
Figure 11. Junction capacitance versus
45
40
35
30
25
20
15
10
1000
5
0
100
10
0
V
1
FP
I =I
T =125°C
1
F
C(pF)
j
F(AV)
(V)
100
Transient peak forward voltage
versus dI
reverse voltage applied (typical
values)
10
200
dI /dt(A/µs)
F
F
/dt (typical values)
V (V)
R
300
100
400
V
OSC
F=1MHz
T =25°C
=30mV
j
RMS
1000
500
Figure 10. Forward recovery time versus dI
Figure 12. Thermal resistance junction to
750
700
650
600
550
500
450
400
350
300
250
200
80
70
60
50
40
30
20
10
0
0
R
0
t (ns)
th(j-a)
fr
(°C/W)
5
(typical values)
ambient versus copper surface
under tab (Epoxy printed circuit
board FR4, e
100
10
15
200
dI /dt(A/µs)
S (cm²)
CU
F
20
cu
= 35 µm)
300
25
Characteristics
30
400
V =1.5 x V max.
FR
T =125°C
I =I
F
j
35
F(AV)
F
F
500
40
/dt
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