STTH12S06 STMicroelectronics, STTH12S06 Datasheet

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STTH12S06

Manufacturer Part Number
STTH12S06
Description
Turbo 2 ultrafast high voltage rectifier
Manufacturer
STMicroelectronics
Datasheet

Specifications of STTH12S06

Insulated Voltage
1500 VRMS

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Table 1.
Features and benefits
Description
ST's STTH12S06 is a state of the art Ultrafast
recovery diode. By the use of 600 V Pt doping
Planar technology, this diode will outperform the
power factor correction circuits operating in
hardswitching conditions. The extremely low
reverse recovery current of the STTH12S06,
reduces significantly the switching power losses
of the MOSFET, and thus increases the
Table 2.
October 2007
Symbol
Ultrafast recovery
Low reverse recovery current
Reduces losses in diode and switching
transistor
Low thermal resistance
Higher frequency operation
Insulated voltage: 1500 V
V
I
I
F(AV
T
FSM
RRM
T
stg
j
I
)
T
RM (typ.)
V
t
V
I
rr (typ)
F(AV)
j (max)
F (typ)
RRM
Main product characteristics
Absolute ratings (limiting values at 125 °C, unless otherwise stated)
Repetitive peak reverse voltage
Average forward current
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
RMS
175 °C
600 V
14 ns
1.5 V
12 A
6 A
Parameter
Turbo 2 ultrafast high voltage rectifier
Rev 1
efficiency of the application. This allows designers
to reduce the size of their heatsinks.
This device is also intended for applications in
power supplies and power conversions systems,
and other power switching applications.
t
p
= 10 ms sinusoidal
STTH12S06FP
TO-220FPAC
STTH12S06
K
- 65 + 175
Value
600
100
175
12
A
www.st.com
Unit
°C
°C
V
A
A
1/6
6

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STTH12S06 Summary of contents

Page 1

... Higher frequency operation ■ Insulated voltage: 1500 V RMS Description ST's STTH12S06 is a state of the art Ultrafast recovery diode. By the use of 600 V Pt doping Planar technology, this diode will outperform the power factor correction circuits operating in hardswitching conditions. The extremely low reverse recovery current of the STTH12S06, ...

Page 2

... Forward voltage drop versus forward current T T =150°C =150° (Maximum values) (Maximum values =150°C =150° (Typical values) (Typical values STTH12S06 Unit °C/W Unit µA V Unit =25°C j (Maximum values) ( ...

Page 3

... STTH12S06 Figure 3. Relative variation of thermal impedance, junction to case, versus pulse duration 1.0 Single pulse 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 t (s) p 0.0 1.E-03 1.E-02 1.E-01 Figure 5. Reverse recovery time versus dI /dt (typical values) F 120 100 =125° =25° /dt(A/µ 100 150 200 250 300 350 Figure 7. ...

Page 4

... Max. Min. A 4.4 4.6 0.173 B 2.5 2.7 0.098 D 2.5 2.75 0.098 E 0.45 0.70 0.018 F 0.75 1 0.030 F1 1.15 1.70 0.045 G 4.95 5.20 0.195 G1 2.4 2.7 0.094 H 10 10.4 0.393 L2 16 Typ. 0.63 Typ. L3 28.6 30.6 1.126 L4 9.8 10.6 0.386 L5 2.9 3.6 0.114 L6 15.9 16.4 0.626 L7 9.00 9.30 0.354 Dia. 3.00 3.20 0.118 STTH12S06 Inches Max. 0.181 0.106 0.108 0.027 0.039 0.067 0.205 0.106 0.409 1.205 0.417 0.142 0.646 0.366 0.126 ...

Page 5

... STTH12S06 3 Ordering information Table 7. Ordering information Part number STTH12S06FP 4 Revision history Table 8. Revision history Date 02-Oct-2007 Marking Package STTH12S06FP TO-220FPAC Revision 1 Initial release. Ordering information Weight Base qty Delivery mode 1.64 50 Tube Changes 5/6 ...

Page 6

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 6/6 Please Read Carefully: © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STTH12S06 ...

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